Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Masanori Isoda"'
Autor:
Hiroyuki MISHIMA, Junichi AYABE, Mutsumi TAKADERA, Yusuke TSUCHIYA, Taisuke KAWASAKI, Masayuki OKANO, Masanori ISODA, Yoshihide TANAKA
Publikováno v:
NMC Case Report Journal. 9:209-212
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c04c45d9c622037240c8456fdcc4ee8
https://doi.org/10.2176/jns-nmc.2022-0066
https://doi.org/10.2176/jns-nmc.2022-0066
Publikováno v:
Journal of the Japan Society of Colour Material. 79:10-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a30223de3086606c8633e76b475a398
https://doi.org/10.4011/shikizai1937.79.10
https://doi.org/10.4011/shikizai1937.79.10
Publikováno v:
Macromolecules. 30:57-62
Ring-opening polymerization of δ-valerolactone (δ-VL) initiated with (5,10,15,20-tetraphenylporphinato)aluminum methoxide ((TPP)AlOMe, 1; X = OMe) was dramatically accelerated upon addition of methylaluminum bis(2,6-di-tert-butyl-4-methylphenolate)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7db2a8b9c22f8167cb21030a8aa169a9
https://doi.org/10.1021/ma961265u
https://doi.org/10.1021/ma961265u
Publikováno v:
Macromolecular Symposia. 98:163-170
Metalloporphyrin initiator coupled with an appropriate organometallic Lewis acid catalyst could make possible the first example of living anionic polymerization of oxetane. Lewis acid built-in metalloporphyrins were designed as a new highly active ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8335e9c2b403062deb2831f3d6cefdd4
https://doi.org/10.1002/masy.19950980113
https://doi.org/10.1002/masy.19950980113
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:414-419
A bus architecture is proposed for reducing the operating power of future ULSIs. It uses new types of bus driver circuits and bus receiver circuits to reduce the bus signal swing while maintaining a low standby current. The bus driver circuit has a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6347ec970bb0ebafa3f6b1f4f83b49c
https://doi.org/10.1109/4.210023
https://doi.org/10.1109/4.210023
Autor:
Koji Takada, Naoki Nishikawa, Yoshifumi Yamagata, Masanori Isoda, Yuichi Nishida, Yasuo Nagahara
Publikováno v:
Journal of oleo science. 56(6)
In recent years, hair coloring gains popularity as a trend of consumer's hair care. This coloring frequently damages hair. In response to this, a new shampoo-base was developed for repairing hair damaged by coloring. The new shampoo-base was prepared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84af91273791b7e03d8340cc6e03112d
https://pubmed.ncbi.nlm.nih.gov/17898494
https://pubmed.ncbi.nlm.nih.gov/17898494
Autor:
Natsuki Yokoyama, Masashi Horiguchi, Fumio Murai, H. Goto, Hiroki Yamashita, Toshihiro Tanaka, T. Kisu, Eiji Takeda, Goto Yasushi, Toru Kaga, Masanori Isoda, Shinpei Iijima, Makoto Ohkura, Kenichi Shoji, R. Nagai, Y. Sudoh, Takashi Nishida
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
In keeping with the trend of reducing DRAM cell area, with a target for 1-gigabit DRAMs of less than 0.3 /spl mu/m/sup 2/, the authors have developed a 0.29-/spl mu/m/sup 2/ metal/insulator/metal crown-shaped capacitor (MIM-CROWN) cell with low heigh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4d883f3a638f554609cd0c1c4a9844
https://doi.org/10.1109/iedm.1994.383261
https://doi.org/10.1109/iedm.1994.383261
Autor:
Eiji Takeda, Masanori Isoda, Y. Nakagome, Toru Kaga, Digh Hisamoto, Shinichiro Kimura, Takashi Nishida
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
Summary form only given. The first stacked DRAM (dynamic RAM) cell using vertical ultra-thin SOI (silicon-on-insulator) MOSFET (DELTA, or fully depleted lean-channel transistor) is proposed. Since the ultra-thin SOI structure provides high noise immu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03ffe14b9bbf546e2e7b8297b8164d8
https://doi.org/10.1109/iedm.1991.235266
https://doi.org/10.1109/iedm.1991.235266
Publikováno v:
Low-Power CMOS Design; 1998, p275-280, 6p
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