Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Masanobu Iwaya"'
Autor:
Kazumi Takagiwa, Masatoshi Sugimoto, Mutsumi Sawada, Masanobu Iwaya, Naoto Fujishima, Hongfei Lu, Akio Sugi, Shinichiro Matsunaga
Publikováno v:
IEEJ Transactions on Industry Applications. 127:261-266
We developed a battery protection IC integrating a low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM). In the bi-directional switches, two MOSFETs share a drain region and there is neither drain contact nor drain metal wire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f965ef545644465ce2465d576e6dff
https://doi.org/10.1541/ieejias.127.261
https://doi.org/10.1541/ieejias.127.261
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
New 60V-class intelligent power switch (IPS) technology implementing a vertical trench MOSFET has been developed for automotive applications. We have realized the method to integrate a 60V-class vertical trench MOSFET with high voltage surge robustne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83bd6a9f760a917dc076014eb695e98
https://doi.org/10.1109/ispsd.2013.6694450
https://doi.org/10.1109/ispsd.2013.6694450
Publikováno v:
Japanese Journal of Applied Physics. 39:4651
Chemical and electrochemical nanofabrication processes used for fabricating GaAs-based single and coupled quantum wire transistors (QWTrs) utilizing Schottky in-plane gate (IPG) structures are described. IPG and metal dot formation processes using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6580aa07bae9b1edb8d4420fb5b2f82b
https://doi.org/10.1143/jjap.39.4651
https://doi.org/10.1143/jjap.39.4651