Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Masanobu Hanazono"'
Publikováno v:
MRS Bulletin. 27:772-775
An abrasive-free polishing (AFP) solution for chemical–mechanical planarization (CMP) of copper films on semiconductor wafers has been developed to overcome such disadvantages of conventional CMP as dishing, erosion, Cu and oxide loss, and microscr
Publikováno v:
Phase Transitions. 42:59-63
A novel proximity effect between superconductor and magnetic manganese oxide has been found. To investigate interactions between superconductor and magnetic materials, we have fabricated both trilayered-type and coplanar-type junctions and investigat
Autor:
Kenichi Onisawa, Abe Yoshio, Masanobu Hanazono, Katsumi Tamura, Takahiro Nakayama, Yoshimasa A. Ono
Publikováno v:
ChemInform. 22
This paper reports on oxygen and oxidation effects in SrS powder that were investigated in order to improve luminance of SrS-based thin-film electroluminescent devices, XPS analysis revealed that the SrS powder surface was oxidized by the adsorption
Publikováno v:
Solid State Communications. 81:993-997
Ferromagnetic resonance (FMR) has been measured in the temperature range of 77–296K for a La 0 · 8 Sr 0 · 2 MnO z (LSMO) film and a YBa 2 Cu 3 O y /La 0 · 8 Sr 0 · 2 MnO z /YBa 2 Cu 3 O y (YBCO/LSMO/YBCO) trilayered film. The spectra are highly
Autor:
Matahiro Komuro, Masanobu Hanazono, Yuzoo Kozono, Yutaka Sugita, Katsuya Mitsuoka, Hiroyuki Hoshiya
Publikováno v:
Journal of Applied Physics. 70:5977-5982
Single‐crystal Fe16N2 films have been grown epitaxially on Fe(001)/InGaAs(001) and InGaAs(001) substrates by molecular beam epitaxy (MBE). Saturation flux density Bs of Fe16N2 films has been demonstrated to be 2.8–3.0 T at room temperature, which
Publikováno v:
Journal of the Magnetics Society of Japan. 15:59-62
Publikováno v:
SHINKU. 34:405-412
An optimun deposition condition of HfC- (Hf·Ti) C-TiC triple layered fillm on cemented carbide tools by medium size chemical vapor deposition (CVD) apparatus was obtained, and wear resistance and wear mode of the triple layered film were investigate
Structures and Saturation Magnetic Flux Density of Epitaxially Grown Fe and Fe-N Films on GaAs (100)
Publikováno v:
IEEE Translation Journal on Magnetics in Japan. 5:493-501
Fe and Fe-N films were deposited on GaAs (100) substrates using an MBE system. 100 A thick Fe single-crystal films were grown at substrate temperatures between 300°C and 400°C, at a rate of 1 A/sec. Fe-N films of thickness 1000 A were then grown at
Publikováno v:
Journal of Applied Physics. 67:5126-5130
Fe‐N films with thicknesses of 70–1000 A were deposited by MBE onto Fe films which were epitaxially grown onto GaAs(100) substrates. Without the Fe layer, epitaxially grown Fe‐N films could not be obtained due to a reaction between Fe‐N and G
Publikováno v:
Journal of the Magnetics Society of Japan. 14:701-706