Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masanari Shindo"'
Publikováno v:
Journal of Non-Crystalline Solids. :747-750
a-Si:H formed by the method of reactive evaporation of silicon with supplying hydrogen ion has much the same properties as films prepared by silane grow discharge (GD) decomposition. Growth kinetics in this method is described. Hydrogen ion suppresse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32aac4028bf205a85bd296209f6d5e89
https://doi.org/10.1016/0022-3093(83)90279-x
https://doi.org/10.1016/0022-3093(83)90279-x
Publikováno v:
Japanese Journal of Applied Physics. 16:1485-1486
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c01bca63ec4336b4c81fc9f18c919f
https://doi.org/10.1143/jjap.16.1485
https://doi.org/10.1143/jjap.16.1485
Publikováno v:
Japanese Journal of Applied Physics. 23:273
A high rate deposition method of a-Si: H based on reactive evaporation is described. a-Si: H prepared at a deposition rate of 30 Å/sec has much the same photoconductivity as films prepared by the glow discharge (GD) method. It is revealed that silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f3b0f5bbf6fbb78411150abfcded63
https://doi.org/10.1143/jjap.23.273
https://doi.org/10.1143/jjap.23.273
Publikováno v:
Japanese Journal of Applied Physics. 24:1100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055d41d3b1ba8bbfe3aeeae21319bf4d
https://doi.org/10.1143/jjap.24.1100
https://doi.org/10.1143/jjap.24.1100
Publikováno v:
Japanese Journal of Applied Physics. 19:1571
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7dc8396e6775e4a3871215a0c5fe8fc
https://doi.org/10.1143/jjap.19.1571
https://doi.org/10.1143/jjap.19.1571
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