Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Masanari Kajiwara"'
Autor:
Yayori Abe, Yuki Watanabe, Toshiya Kotani, Masanari Kajiwara, Shigeki Nojima, Fumiharu Nakajima
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XII.
In recent years, various methods for hotspot detection during optical proximity correction (OPC) verification have been studied. They try to predict hotspots by analyzing optical features of aerial image such as peak intensity. However, detection acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd0a7f4ede43900238e63f53abe96c01
https://doi.org/10.1117/12.2297189
https://doi.org/10.1117/12.2297189
Autor:
Ryota Aburada, Toshiya Kotani, Hiromitsu Mashita, Nozomu Furuta, Masanari Kajiwara, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Hot spot fixing (HSF) method has been used to fix many hot spots automatically. However, conventional HSF based on a biasing based modification is difficult to fix many hot spots under a low-k1 lithography condition. In this paper we proposed a new H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33cc4d1ed6b5be094aca33255e03c69
https://doi.org/10.1117/12.2046272
https://doi.org/10.1117/12.2046272
Autor:
Keisuke Yamamoto, Yuusaku Suehiro, Dong Wang, Youhei Sugimoto, Masanari Kajiwara, Hiroshi Nakashima
Publikováno v:
Thin Solid Films. 517:204-206
We fabricated TaN-gate electrodes on HfO2 and SiO2 films by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 and TaN/HfO2 interfacial layers. The effective work function (Φm,eff) of TaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb0f8c0405c948bbcf95e47dcaf7c441
https://doi.org/10.1016/j.tsf.2008.08.058
https://doi.org/10.1016/j.tsf.2008.08.058
Autor:
Shoji Mimotogi, Tomoko Ojima, Masanari Kajiwara, Kazuhiro Takahata, Seiro Miyoshi, Kohji Hashimoto, Hideaki Abe
Publikováno v:
SPIE Proceedings.
We have created a model that uses discriminant function analysis to predict failures in etched hole patterning of the type that induces an open-contact failure by using critical dimension scanning electron microscope (CDSEM) measurement values of aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f139a4a7af1388fad1ba34fb64786063
https://doi.org/10.1117/12.916029
https://doi.org/10.1117/12.916029
Autor:
Masanari Kajiwara, Suigen Kyoh, Shimon Maeda, Soichi Inoue, Satoshi Tanaka, Koji Nakamae, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Continuous shrinkage of design rule (DR) in ultra-large-scale integrated circuit (ULSI) devices brings about greater difficulty in the manufacturing process. The keys to meeting small process margin are adequate extraction of critical dimension (CD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f3abdd22d4dfb9f0828888c70f8e94
https://doi.org/10.1117/12.846542
https://doi.org/10.1117/12.846542
Autor:
Dong Wang, Keisuke Yamamoto, Kana Hirayama, Masanari Kajiwara, Youhei Sugimoto, Hiroshi Nakashima, Yuusaku Suehiro
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
High-permittivity (high-k) dielectrics with HfO2/HfxSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e632ac0077696cad4a4d4c67d78fc0
https://doi.org/10.1109/icsict.2008.4734660
https://doi.org/10.1109/icsict.2008.4734660
Autor:
Suigen Kyoh, Soichi Inoue, Koji Nakamae, Satoshi Tanaka, Masanari Kajiwara, Sachiko Kobayashi, Shimon Maeda
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 10:013020
Continuous shrinkage of the design rule in large-scale integrated circuit devices brings about greater difficulty in the manufacturing process. The keys to meeting small process margin are adequate extraction of critical dimension tolerance for each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edca47a12d4f116f82facee7bcb426a6
https://doi.org/10.1117/1.3565449
https://doi.org/10.1117/1.3565449
Autor:
Hiroshi Nakashima, Keisuke Yamamoto, Masanari Kajiwara, Yuusaku Suehiro, Dong Wang, Youhei Sugimoto, Kana Hirayama
Publikováno v:
Semiconductor Science and Technology. 23:125020
High-permittivity (high-k) dielectrics with HfO2/HfxSi1−xOy/Si structures were fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure. By changing a SiO2 film in an initial structure from plasma oxidation at a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd8bdc3830d83cf0c383230c052d60e
https://doi.org/10.1088/0268-1242/23/12/125020
https://doi.org/10.1088/0268-1242/23/12/125020
Autor:
Masanari Kajiwara, Yuusaku Suehiro, Dong Wang, Youhei Sugimoto, Keisuke Yamamoto, Hiroshi Nakashima
Publikováno v:
Applied Physics Letters. 91:112105
The effective work function (Φm,eff) of TaN on HfO2 after postmetallization annealing (PMA) was investigated using TaN∕HfO2∕SiO2∕Si as a sample structure. We found that Φm,eff on HfO2 is stable at PMA temperatures of less than 600°C and is 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9b0975daa59caa3e89973ad37ce091
https://doi.org/10.1063/1.2783472
https://doi.org/10.1063/1.2783472
Autor:
Sachiko Kobayashi, Satoshi Tanaka, Suigen Kyoh, Shimon Maeda, Masanari Kajiwara, Soichi Inoue, Koji Nakamae
Publikováno v:
Journal of Micro/Nanolithography, MEMS & MOEMS; Jan-Mar2011, Vol. 10 Issue 1, p013020-013020-7, 1p