Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Masamitu TAKAHASI"'
Autor:
Kentaro Kutsukake, Takefumi Kamioka, Kota Matsui, Ichiro Takeuchi, Takashi Segi, Takuo Sasaki, Seiji Fujikawa, Masamitu Takahasi
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 4, Iss 1 (2024)
ABSTRACTWe analyzed a number of complicated X-ray diffraction patterns using feature patterns obtained through unsupervised machine learning. A crystalline SiGe film on a Si substrate with a spatial fluctuation in both composition and crystal orienta
Externí odkaz:
https://doaj.org/article/c5fd43a7b7414262a9bc15bb30fbf8c3
Autor:
Takuo Sasaki, Takuya Iwata, Kanya Sugitani, Takahiro Kawamura, Toru Akiyama, Masamitu Takahasi
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 025502 (2024)
The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (000 $\bar{1}$ ) surfaces was probed using in situ X-ray scattering under MBE conditions. An ordered bilayer of Ga forms on GaN(0001) but the ordering decreases at substrate
Externí odkaz:
https://doaj.org/article/936deca622c74e9ca87b11697cd3d6d7
Autor:
Hidetoshi Suzuki, Yuka Nakata, Masamitu Takahasi, Kazuma Ikeda, Yoshio Ohshita, Osamu Morohara, Hirotaka Geka, Yoshitaka Moriyasu
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035303-035303-6 (2016)
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs
Externí odkaz:
https://doaj.org/article/efc7f18ef0514e1098b7c7ec08caedcc
Publikováno v:
The Journal of Physical Chemistry C. 124:17711-17716
The structural dynamics of an iodide layer adsorbed on Au(111) were investigated using X-ray photon correlation spectroscopy (XPCS), electrochemical scanning tunneling microscopy (STM), and time-resolved X-ray diffraction. At the adsorption equilibri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ce4fd3fc0fdf6fa03101aceace164b
https://doi.org/10.1021/acs.jpcc.0c05330
https://doi.org/10.1021/acs.jpcc.0c05330
Autor:
Koji Horiba, Takashi Imazono, Hideaki Iwasawa, Kentaro Fujii, Jun Miyawaki, Yoshiyuki Ohtsubo, Nobuhito Inami, Takeshi Nakatani, Kento Inaba, Akane Agui, Hiroaki Kimura, Masamitu Takahasi
Publikováno v:
Journal of Physics: Conference Series. 2380:012034
The beamline for angle-resolved photoemission spectroscopy (ARPES) with a nano-focused beam (nano-ARPES) is planned as one of the public beamlines in NanoTerasu, the 3-GeV next-generation synchrotron radiation facility at Tohoku, Japan, which is sche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca8497937b500639ed5ce36f753bec0
https://doi.org/10.1088/1742-6596/2380/1/012034
https://doi.org/10.1088/1742-6596/2380/1/012034
Autor:
Yoshiyuki Ohtsubo, Tetsuro Ueno, Hideaki Iwasawa, Jun Miyawaki, Koji Horiba, Kento Inaba, Akane Agui, Nobuhito Inami, Takeshi Nakatani, Takashi Imazono, Kentaro Fujii, Hiroaki Kimura, Masamitu Takahasi
Publikováno v:
Journal of Physics: Conference Series. 2380:012037
A synchrotron radiation beamline in the soft- and tender-X ray energy range of 180-3000 eV with versatile polarization control has been designed for NanoTerasu, the 3-GeV next-generation synchrotron radiation facility at Tohoku, Japan. A series of fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac090aedab4590966fc46ca98df3d55c
https://doi.org/10.1088/1742-6596/2380/1/012037
https://doi.org/10.1088/1742-6596/2380/1/012037
Autor:
Jun Miyawaki, Kentaro Fujii, Takashi Imazono, Koji Horiba, Yoshiyuki Ohtsubo, Nobuhito Inami, Takeshi Nakatani, Kento Inaba, Akane Agui, Hiroaki Kimura, Masamitu Takahasi
Publikováno v:
Journal of Physics: Conference Series. 2380:012030
The optical design of the ultrahigh-resolution RIXS beamline, which is currently developed at NanoTerasu in Japan, is described. The main goal of this beamline is to perform ultrahigh-resolution RIXS measurements with a total energy resolution of E/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0268a9a8edacadca5c921fe09c1a350b
https://doi.org/10.1088/1742-6596/2380/1/012030
https://doi.org/10.1088/1742-6596/2380/1/012030
Autor:
Takuo Sasaki, Masamitu Takahasi
Publikováno v:
Journal of Crystal Growth. 512:33-36
Using in situ synchrotron X-ray reciprocal space mapping, this study investigates the evolution of lattice deformations in the InGaAs/GaAs(1 1 1)A structure with or without a thin InAs layer grown by molecular beam epitaxy. During the initial growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1f54744d7237a477f5e04414135fc4
https://doi.org/10.1016/j.jcrysgro.2019.02.007
https://doi.org/10.1016/j.jcrysgro.2019.02.007
Autor:
Koshiro Kubo, Shota Nogawa, Masahiro Kawano, Takuo Sasaki, Masamitu Takahasi, Hidetoshi Suzuki
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d9406cf518264553812506c0fe27fcc
https://doi.org/10.7567/ssdm.2020.f-9-02
https://doi.org/10.7567/ssdm.2020.f-9-02
Publikováno v:
Journal of Crystal Growth. 468:241-244
Strain relaxation of InxGa1−xAs/GaAs(001) with systematically changed In content between x=0.23 and x=0.80 has been studied using in situ synchrotron X-ray diffraction during molecular beam epitaxy growth. Correlation between the In composition and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a154cf298183afaecc280af30d6101
https://doi.org/10.1016/j.jcrysgro.2017.01.028
https://doi.org/10.1016/j.jcrysgro.2017.01.028