Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Masamitsu Itoh"'
Autor:
Yong-Taik Kim, Hirokazu Kato, S. Inoue, Motofumi Komori, Hirotaka Tsuda, Kei Kobayashi, A. Mitra, K. Matasunaga, Hiroshi Tokue, Sachiko Kobayashi, Masanobu Saito, Tetsuro Nakasugi, T. Imamura, Wooyung Jung, Takeharu Motokawa, Tatsuhiko Higashiki, T. Komukai, Kazuya Fukuhara, J. Cho, Masamitsu Itoh, Masayuki Hatano, K. Takahata, Shingo Kanamitsu, Takuya Kono, Kohji Hashimoto
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ( $3\sigma$ ) and the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e744f518046f1bb7c5a2041b9f1608
https://doi.org/10.1109/iedm.2018.8614578
https://doi.org/10.1109/iedm.2018.8614578
Autor:
Akihiko Ando, Masamitsu Itoh, Takashi Hirano, Keiko Morishita, Ryoji Yoshikawa, Takashi Kamo, Masato Naka
Publikováno v:
Photomask Technology.
It is generally said that conventional deep ultraviolet inspection tools have difficulty meeting the defect requirement for extreme ultraviolet masks of hp 1X nm. In previous studies, it has been shown that the newly developed optics and systems usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57736e2ee65f132fd478b9f0466ef807
https://doi.org/10.1117/12.2280504
https://doi.org/10.1117/12.2280504
Publikováno v:
SPIE Proceedings.
Recently, much attention has been paid on nanoimprint lithography (NIL) because of its capability for fabricating device at a low cost without multiple patterning. It is considered as a candidate for next generation lithography technology. NIL is one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23aa656ddf44aef98fb2661296c92204
https://doi.org/10.1117/12.2280685
https://doi.org/10.1117/12.2280685
Autor:
Mana Tanabe, Masamitsu Itoh, Takeharu Motokawa, Keiko Morishita, Shingo Kanamitsu, Eiji Yamanaka, Masato Saito, Machiko Suenaga, Keisuke Yagawa, Akihiko Ando
Publikováno v:
SPIE Proceedings.
UV nano imprint lithography (UV-NIL) has high-throughput and cost-effective for complex nano-scale patterns and is considered as a candidate for next generation lithography tool. In addition, NIL is the unmagnified lithography and contact transfer te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea47523665e70d0a55c7dc566b3dc033
https://doi.org/10.1117/12.2243575
https://doi.org/10.1117/12.2243575
Autor:
Kazuhiko Omote, Eiji Yamanaka, Masamitsu Itoh, Naoya Hayashi, Kiyoshi Ogata, Rikiya Taniguchi, Yoshiyasu Ito
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost. High resolution of NIL will be determined by a high defini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98ad25e9696a6904ea3f1522ea31c72
https://doi.org/10.1117/12.2246570
https://doi.org/10.1117/12.2246570
Autor:
Yasuo Kawakami, Hideoki Fukuoka, Shin Ichi Tonosaki, Junjiro Kubo, Junichi Ushiyama, Hiroshi Akima, Masamitsu Itoh, Hiroaki Kanehisa, Tetsuo Fukunaga
Publikováno v:
Medicine & Science in Sports & Exercise. 35:655-662
A 20-d 6 degrees head-down tilt bed rest project was conducted to evaluate the effect of dynamic leg press and plantar flexion resistance training on muscle size and function in human plantar flexors (PF) throughout the prolonged bed rest.Twelve heal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::117579f726ec57f1a7814a402e978313
https://doi.org/10.1249/01.mss.0000058367.66796.35
https://doi.org/10.1249/01.mss.0000058367.66796.35
Autor:
Masahiro Hatakeyama, Kenji Terao, Shinji Yamaguchi, Hayashi Takehide, Ryo Tajima, Norio Kimura, Masamitsu Itoh, Takeshi Murakami, Hiroshi Sobukawa, Ryoji Yoshikawa, Kiwamu Tsukamoto, Kenji Watanabe, Masato Naka, Naoya Hayashi, Takashi Hirano
Publikováno v:
SPIE Proceedings.
According to the road map shown in ITRS [1], the EUV mask requirement for defect inspection is to detect the defect size of sub- 20 nm in the near future. EB (Electron Beam) inspection with high resolution is one of the promising candidates to meet s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3174ef0378e9229df38027170158afa0
https://doi.org/10.1117/12.2069161
https://doi.org/10.1117/12.2069161
Autor:
Masato Saito, Takeharu Motokawa, Keisuke Yagawa, Masamitsu Itoh, Yoshihito Kobayashi, Kunihiro Ugajin, Kazuki Hagihara, Machiko Suenaga
Publikováno v:
SPIE Proceedings.
ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices. However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140a99564de8ea450b8212f207482c31
https://doi.org/10.1117/12.2069651
https://doi.org/10.1117/12.2069651
Autor:
Masato Saito, Yoshihito Kobayashi, Takeharu Motokawa, Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Masamitsu Itoh, Kazuki Hagihara
Publikováno v:
SPIE Proceedings.
Photomask used for optical lithography has been developed for purpose of fabrication a pattern along with finer designed rules and increase the productivity. With regard to pattern fabrication on mask, EB (Electron beam) mask writer has been used bec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7f86ceb0e5ea2cdb2133f167e573916
https://doi.org/10.1117/12.2033257
https://doi.org/10.1117/12.2033257
Autor:
Takashi Hirano, Toru Koike, Masato Naka, Motoki Kadowaki, Masahiro Hatakeyama, Shinji Yamaguchi, Hayashi Takehide, Kiwamu Tsukamoto, Kenji Terao, Ryo Tajima, Takeshi Murakami, Norio Kimura, Naoya Hayashi, Hiroshi Sobukawa, Yuichiro Yamazaki, Kenji Watanabe, Masamitsu Itoh
Publikováno v:
SPIE Proceedings.
According to the ITRS Roadmap [1], within a few years the EUV mask requirement for defect will be detection of defect size of less than 25 nm. Electron Beam (EB) inspection is one of the candidates to meet such a severe defect requirement. EB inspect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a745162bf65cc8ec19847f84d0490a
https://doi.org/10.1117/12.964099
https://doi.org/10.1117/12.964099