Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Masamichi Sakaino"'
Autor:
Koichi Onishi, Kouki Sezaimaru, Fumihiro Nakashima, Yong Sun, Kenta Kirimoto, Masamichi Sakaino, Shigeru Kanemitsu
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 22, p1-6, 6p, 7 Graphs
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 15, p154308-1-154308-9, 9p, 1 Diagram, 3 Charts, 10 Graphs
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 3, p034301-1-034301-7, 7p, 11 Graphs
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 2, p1-6, 6p, 11 Graphs
Publikováno v:
Materials Sciences and Applications. 5(11):767-782
Ageing behaviors of the positive electrode of lithium ion battery are characterized by measuring mechanical properties of the electrode reeds, such as resonance frequency and internal friction, as a function of temperature. In the measurements of the
Publikováno v:
Applied Physics A. 112:927-931
The electrical properties of microcrystalline Sc3N@C80 fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C80 sample has an energy band gap of 1.71 eV, which do
Autor:
Fumihiro Nakashima, Yong Sun, Masamichi Sakaino, Kenta Kirimoto, Koichi Onishi, Kouki Sezaimaru, Shigeru Kanemitsu
Publikováno v:
Journal of Applied Physics. 121:225108
The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250–450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of
Publikováno v:
Japanese Journal of Applied Physics. 53:035102
The transport property of carriers passing through a nanocrystalline Lu3N@C80/Au interface has been studied by measuring impedance under various alternating voltages and DC biases. A depletion layer thicker than 110 µm is recognized in the Lu3N@C80/
Publikováno v:
Journal of Applied Physics. 115:023701
Electrical properties of the C60(OH)10/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300–500 K. The Schottky barrier of the C60(OH)10/Au contact was confirmed to be 0.70±0.02 eV from Arrh
Publikováno v:
Japanese Journal of Applied Physics. 52:091301
The impurity bands and corresponding ionization energies of nitrogen atoms in a 4H-SiC crystal with a concentration of 1×1019 cm-3 are measured by a nondestructive and noncontact traveling-wave method. When a SiC sample was placed near the surface o