Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Masamichi Akazawa"'
Autor:
Yuki Hatakeyama, Masamichi Akazawa
Publikováno v:
AIP Advances, Vol 12, Iss 12, Pp 125224-125224-7 (2022)
An interface state density (Dit) distribution near the conduction band edge (EC) at the Al2O3/Mg-ion-implanted GaN interface was measured after ion implantation, annealing with an AlN protective cap, and cap layer removal. Mg ions were implanted into
Externí odkaz:
https://doaj.org/article/07cd7c6986f84b69942afa0a1557ec05
Autor:
Masamichi Akazawa, Yuya Kitawaki
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085020-085020-5 (2021)
An attempt was made to form a thermally grown SiO2/GaN interface. A Si layer deposited on the c-plane GaN surface was oxidized in an O2 atmosphere to form a SiO2 layer. The formation of SiO2 with a bandgap of 8.6 eV was confirmed by x-ray photoelectr
Externí odkaz:
https://doaj.org/article/7655960a99374658ac5eede9ea51cb23
Autor:
Kazuki Isobe, Masamichi Akazawa
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 029901-029901-1 (2021)
Externí odkaz:
https://doaj.org/article/35a16e1d0425469899da0d0998341b7c
Autor:
Kazuki Isobe, Masamichi Akazawa
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115011-115011-6 (2018)
The impact of surface treatment on Schottky contacts on a GaN-on-GaN epitaxial layer was comprehensively investigated by combining X-ray photoelectron spectroscopy (XPS) at each step of the treatment process and electrical measurements on Schottky ba
Externí odkaz:
https://doaj.org/article/c3d5388e6b674dccbb2db47bb8f50747
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025310-025310-7 (2018)
We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions
Externí odkaz:
https://doaj.org/article/be6e47e4211144a597e8d1c11a10a975
Publikováno v:
Journal of Electronic Materials. 51:1731-1739
The encapsulant-dependent effects of long-term low-temperature annealing on defects in Mg-ion-implanted GaN were investigated using metal-oxide-semiconductor (MOS) diodes. Annealing was carried out at 600 degrees C under nitrogen flow without or with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f3cf40bdf71d20e17d2dc26664c3f3b
https://doi.org/10.1007/s11664-022-09431-y
https://doi.org/10.1007/s11664-022-09431-y
Autor:
Masamichi Akazawa, Yuki Hatakeyama
Publikováno v:
AIP Advances. 12:125224
An interface state density ( D it) distribution near the conduction band edge ( E C) at the Al2O3/Mg-ion-implanted GaN interface was measured after ion implantation, annealing with an AlN protective cap, and cap layer removal. Mg ions were implanted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03fc55f7409fd64d0f4a5e0887201598
https://doi.org/10.1063/5.0117321
https://doi.org/10.1063/5.0117321
Autor:
Masamichi Akazawa, Yuya Tamamura, Takahide Nukariya, Kouta Kubo, Taketomo Sato, Tetsuo Narita, Tetsu Kachi
Publikováno v:
Journal of Applied Physics. 132:195302
Defect levels in the vicinity of the Al2O3/p-type GaN interface were characterized using a sub-bandgap-light-assisted capacitance–voltage ( C–V) method. For metal–oxide–semiconductor (MOS) diodes prepared using p-type GaN (p-GaN) and Al2O3 fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d9aa48f947a4f23df077ac2638c1c8c
https://doi.org/10.1063/5.0109117
https://doi.org/10.1063/5.0109117
Autor:
Yuya Kitawaki, Masamichi Akazawa
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085020-085020-5 (2021)
An attempt was made to form a thermally grown SiO2/GaN interface. A Si layer deposited on the c-plane GaN surface was oxidized in an O-2 atmosphere to form a SiO2 layer. The formation of SiO2 with a bandgap of 8.6 eV was confirmed by x-ray photoelect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af7cf531e6096ef42e0eb0f45956cda7
https://doaj.org/article/7655960a99374658ac5eede9ea51cb23
https://doaj.org/article/7655960a99374658ac5eede9ea51cb23
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The impact of the dosage on electrical properties of Mg-ion-implanted GaN was investigated. To investigate the near-surface region, n-GaN $([\mathrm{Si}]\ =5\times 10^{17}\ \mathrm{cm}^{-3})$ MOS structures with the Mg-ion dosage of $1.5\times 10^{11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2a7b8e0b696f721b5e3c9b4837142f
https://doi.org/10.1109/iciprm.2019.8819158
https://doi.org/10.1109/iciprm.2019.8819158