Výsledky vyhledávání - "Masami Naitou"

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

Autor: Masahiko Ito, Hiroaki Fujibayashi, Hitoshi Osawa, Hidekazu Tsuchida, Masami Naitou, Fukada Keisuke, Takahiro Kozawa, Hideyuki Uehigashi, Isaho Kamata, Kazukuni Hara

Publikováno v: Materials Science Forum. 858:173-176

We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c3e27658808cc2fbd5975a08c3143b8
https://doi.org/10.4028/www.scientific.net/msf.858.173

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Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

Autor: Fukada Keisuke, Kazukuni Hara, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masahiko Ito, Sugiura Toshikazu, Masami Naitou, Hidekazu Tsuchida, Takahiro Kozawa, Hitoshi Osawa, Isaho Kamata, Tetsuya Miyazawa

Publikováno v: Materials Science Forum. 858:119-124

This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74c4307d875c3c7c1c31f0a9a352cd53
https://doi.org/10.4028/www.scientific.net/msf.858.119

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Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques

Autor: Hidekazu Tsuchida, Hirofumi Aoki, Fujibayashi Hiroaki, Hideki Ito, Masami Naitou, Emi Makino, Norihiro Hoshino, Jun Kojima, Masahiko Ito, Tetsuya Miyazawa, Isaho Kamata, Yuichiro Tokuda, Koichi Nishikawa

Publikováno v: Materials Science Forum. :85-90

This paper introduces our recent challenges in fast 4H-SiC CVD growth and defect reduction. Enhanced growth rates in 4H-SiC epitaxial growth by high-speed wafer rotation and in a high-temperature gas source method promoting SiC bulk growth by increas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56d7b737867402cb6ca6cc6584d8fcef
https://doi.org/10.4028/www.scientific.net/msf.778-780.85

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[A retrospective study on awareness in 1922 cases during induction of general anesthesia]

Autor: Takaaki, Chino, Osamu, Nagata, Masami, Naitou, Haruyo, Nagao, Minoru, Nomura, Makoto, Ozaki

Publikováno v: Masui. The Japanese journal of anesthesiology. 54(4)

There are some reports on the incidence of awareness during general anesthesia that is usually stable at the maintenance period. The aim of this study is to evaluate the incidence of awareness during the induction period of general anesthesia in whic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::171145e961da3e52fcf184481755b9f1
https://pubmed.ncbi.nlm.nih.gov/15852625

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