Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Masakuni Tohkai"'
Publikováno v:
Solar Energy Materials and Solar Cells. 49:81-88
Hydrogenated microcrystalline silicon (μc-Si:H) films were deposited by electron beam excited plasma (EBEP) CVD. As the SiH4 flow rate increases, deposition rate steeply increases, however, crystalline fraction and grain size decrease. A high deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7edaa8b75d1a205a656f63e93d2e4a43
https://doi.org/10.1016/s0927-0248(97)00179-7
https://doi.org/10.1016/s0927-0248(97)00179-7
Autor:
Tadashi Ito, Masafumi Yamaguchi, Tamio Hara, Masakuni Tohkai, Koji Yamaguchi, Ban Masahito, Kazuhiko Kawamura, Mitsuru Imaizumi, Kazuhiko Okitsu, Ichiro Konomi
Publikováno v:
Japanese Journal of Applied Physics. 39:6035
Using electron beam excited plasma chemical vapor deposition, nanocrystalline Si films can be grown without H2 dilution. This paper describes the effects of growth parameters on the growth rate and the crystallinity of Si films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b4753f59e27957408fd18736fd304a7
https://doi.org/10.1143/jjap.39.6035
https://doi.org/10.1143/jjap.39.6035
Autor:
Makoto Ryoji, Yosinori Dake, Tamio Hara, Yoshinobu Aoyagi, Manabu Hamagaki, Katsu Ohnishi, Masakuni Tohkai
Publikováno v:
Japanese Journal of Applied Physics. 31:4357
A new etching system using electron-beam-excited plasma (EBEP) has been developed. This EBEP system is able to steadily produce a high-density plasma with a large diameter by introducing a high-current low electron beam into the etching chamber. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd03e0d14a468ffc79b01a49bc41550c
https://doi.org/10.1143/jjap.31.4357
https://doi.org/10.1143/jjap.31.4357