Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Masaki Kazumi"'
Autor:
Hitoshi Aoki, Takuya Totsuka, Haruo Kobayashi, Masaki Kazumi, Shunichiro Todoroki, Yukiko Arai
Publikováno v:
Key Engineering Materials. 698:109-117
In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25391ea99285eb344e4966c3c089177
https://doi.org/10.4028/www.scientific.net/kem.698.109
https://doi.org/10.4028/www.scientific.net/kem.698.109
Autor:
Haruo Kobayashi, Fumitaka Abe, Shunichiro Todoroki, Takuya Totsuka, Masaki Kazumi, Hitoshi Aoki, Masashi Higashino, Yukiko Arai
Publikováno v:
Key Engineering Materials. 698:100-108
The goal of this research is to model the drain current and 1/f noise degradation characteristics of n-channel MOSFETs. In this paper, we present the implementation of hot carrier degradation into drain current equations of BSIM4 model. We show simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf80caa2652c036b5ed9ffa1ef4ef51
https://doi.org/10.4028/www.scientific.net/kem.698.100
https://doi.org/10.4028/www.scientific.net/kem.698.100
A study on HCI induced gate leakage current model used for reliability simulations in 90nm n-MOSFETs
Autor:
Nobukazu Tsukiji, Haruo Kobayashi, Takuya Totsuka, Hitoshi Aoki, Masashi Higashino, Masaki Kazumi
Publikováno v:
ASICON
In this paper, we propose a Hot Carrier Injection (HCI) induced gate leakage current model used for reliability simulations in 90nm n-channel MOSFETs (n-MOSFETs). As far as we have investigated, existing papers and reports regarding on HCI degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffac2e140f2305ad60f3f20a2d884191
https://doi.org/10.1109/asicon.2015.7516944
https://doi.org/10.1109/asicon.2015.7516944
Autor:
Hitoshi Aoki, Masashi Higashino, Takuya Totsuka, Haruo Kobayashi, Masaki Kazumi, Nobukazu Tsukiji
Publikováno v:
ASICON
This paper reports a maximum electric field model of laterally diffused MOSFET (LDMOS) transistors under the condition of high current injection effect used for reliability simulations. LDMOSs operate under high-voltage and large-current biases, wher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ea6e358839aa7b52b2a742adf7fb20
https://doi.org/10.1109/asicon.2015.7516945
https://doi.org/10.1109/asicon.2015.7516945
Autor:
R. Khatami, Fumitaka Abe, Shunichiro Todoroki, Masaki Kazumi, T. Wang, Takuya Totsuka, Hitoshi Aoki, Hiroaki Kobayashi, Yukiko Arai
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2204be7c49f9aacb33a8f273d723481a
https://doi.org/10.7567/ssdm.2014.ps-3-6
https://doi.org/10.7567/ssdm.2014.ps-3-6
Autor:
Takuya Totsuka, Shunichiro Todoroki, Masaki Kazumi, Fumitaka Abe, Ramin Khatami, Taifeng Wang, Hitoshi Aoki, Haruo Kobayashi, Yukiko Arai
Publikováno v:
Japanese Journal of Applied Physics. 54:04DC10
1/f noise is one of the most important characteristics for designing analog/RF circuits including operational amplifiers and oscillators. We have analyzed and developed a novel 1/f noise model in the strong inversion, saturation, and sub-threshold re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7ea610e3197c6b5ee691c828d0469b
https://doi.org/10.7567/jjap.54.04dc10
https://doi.org/10.7567/jjap.54.04dc10
Autor:
Yukiko Arai, Hitoshi Aoki, Fumitaka Abe, Shunichiro Todoroki, Ramin Khatami, Masaki Kazumi, Takuya Totsuka, Taifeng Wang, Haruo Kobayashi
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p