Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Masaki Hirayama"'
Publikováno v:
MATEC Web of Conferences, Vol 333, p 05004 (2021)
Extraction by slug flow gives high mass transfer rate and rapid phase separation than the conventional extraction operation. Therefore, there are many advantages such as the volume of the device becomes small and the solvent drastically reduced. The
Autor:
Shigetoshi Sugawa, Masaki Hirayama
Publikováno v:
Journal of Vacuum Science & Technology A. 38:052407
We investigated the formation mechanism of interfacially mixed AlSiOx films on Si surfaces under low-energy ( 4 × 1015 cm−2 s−1) O2+ ion bombardment during Al2O3 plasma-enhanced atomic layer deposition. When high-dose O2+ ions (>1 × 1017 cm−2
Publikováno v:
Journal of Vacuum Science & Technology A. 38:032408
The effects of low-energy ( 1017 cm−2 cycle−1) during the oxidation steps caused interfacial mixing, and AlSiOx films with abrupt interfaces were formed on Si surfaces. Interfacially mixed AlSiOx films were selectively formed on single-crystal Si
Autor:
Shigetoshi Sugawa, Masaki Hirayama
Publikováno v:
Japanese Journal of Applied Physics. 58:110902
We investigated the effects of low-energy (2O3 plasma-enhanced atomic layer deposition (ALD) films. High-flux ion bombardment caused interfacial mixing with underlying material of Si, and AlSiO x films were formed instead of Al2O3 films. The interfac
Autor:
Masaki Hirayama, Tadahiro Ohmi, Yuji Saito, Herzl Aharoni, Ryu Kaihara, Shigetoshi Sugawa, Katsuyuki Sekine
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:328-339
An advanced approach for the growth of thin and ultra-thin oxide and nitride films at low temperatures (400?C) for the fabrication of future scaled-down semiconductor electron devices is presented. This technique presents an alternative to the existi
Autor:
Masaki Hirayama, Hirokazu Asahara, Daiju Takamizu, Shin Saito, Atsutoshi Inokuchi, Tadahiro Ohmi, Akinobu Teramoto, Migaku Takahashi
Publikováno v:
Thin Solid Films. 518:2953-2956
MgZnO (magnesium–zinc-oxide) films were grown on (11–20) sapphire substrates and Zn-polar ZnO substrates by plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) employing microwave-excited plasma. Structural, electrical and optical
Autor:
Tetsuya Goto, Tadahiro Ohmi, Seij Yasuda, Atsutoshi Inokuchi, Masayuki Kohno, Masaki Hirayama, Toshio Nakanishi, Kiyotaka Ishibashi, Masaru Sasaki, Masahiro Okesaku, Toshihisa Nozawa
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:686-695
The authors developed a ceramic upper shower plate used in the microwave-excited high-density plasma process equipment incorporating a dual shower-plate structure to establish a very uniform gas-flow pattern in the process chamber. Thousands of very
Autor:
Takayuki Watanabe, Yoshio Ishihara, Masaki Hirayama, Kaoru Sakoda, Yasuyuki Shirai, Katsumasa Suzuki, Tadahiro Ohmi, Akinobu Teramoto, Takashi Ito
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:465-470
Although conventional plasma-resolution-type abatement systems for perfluorocarbons (PFCs) achieve PFC removal efficiencies of more than 98%, they consume a lot of electricity. To diminish global warming by reducing CO2 equivalent emissions, an effec
Autor:
Tadahiro Ohmi, Kaoru Sakoda, Masaki Hirayama, K. Suzuki, T. Watanabe, Akinobu Teramoto, Yoshio Ishihara, Y. Shirai, T. Ito
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21(4):668-675
In order to minimize contributions to global warming, it is important to develop a perfluorocompound (PFC) abatement system that can remove PFCs effectively with low electric power. We have developed a new PFC abatement system consisting mainly of a
Autor:
Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Ichirou Takahashi, Tadahiro Ohmi, Yasuyuki Shirai
Publikováno v:
Ferroelectrics. 368:90-95
We have formed ferroelectric Sr 2 (Ta 1 − x ,Nb x ) 2 O 7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr 2 (Ta 1 − x ,Nb x ) 2 O 7 phase], Ta and Nb are oxidized