Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Masaki Fujiu"'
Autor:
Masatoshi Kohno, Yuri Terada, T. Kobayashi, Jumpei Sato, Akihiro Imamoto, Koji Kato, Tomoharu Hashiguchi, Yuki Shimizu, Yoshihisa Watanabe, Fumihiro Kono, Masashi Yamaoka, Yoshinao Suzuki, Ryuji Yamashita, Masami Masuda, Hayato Konno, Mai Muramoto, Tomofumi Fujimura, Masaki Fujiu, Mitsuaki Honma, Takuya Okanaga, Xiaoqing Wang, Mario Sako, Michio Nakagawa, Kazuyoshi Muraoka, Takao Nakajima, Tomoko Araya, Masahiro Kamoshida
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:196-203
A 75 mm $^{2}$ low power 64 Gb MLC NAND flash memory capable of 30 MB/s program throughput and 533 MB/s data transfer rate at 1.8 V supply voltage is developed in 15 nm CMOS technology. 36% power reduction from 3.3 V design is achieved by a new pumpi
Autor:
Mitsuaki Honma, S. Hoshi, Mark Murin, T. Shimizu, T. Kawaai, Michio Nakagawa, K. Nagaba, K. Kanebako, K. Kanazawa, Y. Komatsu, Arik Eyal, Hiroshi Maejima, K. Imamiya, H. Tabata, Menahem Lasser, K. Iwasa, T. Shano, M. Kosakai, Mark Shlick, Noboru Shibata, Masaki Fujiu, Hiroto Nakai, A. Inoue, Katsuaki Isobe, S. Yoshikawa, Avraham Meir, T. Takahashi, N. Motohashi
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:929-937
A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed . This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash, and quadruple bit density
Autor:
Xiaoqing Wang, Tomoharu Hashiguchi, Masahiro Kamoshida, T. Kobayashi, Kazuyoshi Muraoka, Mitsuaki Honma, Takuya Okanaga, Mario Sako, Masatoshi Kohno, Yoshinao Suzuki, Masaki Fujiu, Fumihiro Kouno, Akihiro Imamoto, Tomofumi Fujimura, Hayato Konno, Koji Kato, Takao Nakajima, Tomoko Araya, Masashi Yamaoka, Michio Nakagawa, Mai Muramoto, Yuki Shimizu, Yoshihisa Watanabe, Ryuji Yamashita, Masami Masuda, Yuri Terada, Jumpei Sato
Publikováno v:
ISSCC
The demand for high-throughput NAND Flash memory systems for mobile applications such as smart phones, tablets, and laptop PCs with solid-state drives (SSDs) has been growing recently. To obtain higher throughput, systems employ multiple NAND Flash m
Autor:
Koichi Fukuda, H. Nasu, Hiroshi Maejima, H. Waki, T. Watanabe, Kiyofumi Sakurai, M. Kojima, Chi-Ming Wang, Trung Pham, Naoya Tokiwa, Kazumi Amemiya, M. Morooka, Yoshiaki Takeuchi, Masaaki Higashitani, Koji Hosono, Teruhiko Kamei, T. Hara, T. Maruyama, S. Yoshikawa, K. Kanazawa, Michio Nakagawa, Takumi Abe, Yupin Fong, Masaki Fujiu, Noboru Shibata
Publikováno v:
IEEE Journal of Solid-State Circuits. 41:161-169
An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted cor
Publikováno v:
Applied Surface Science. 224:206-209
Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated during heat treatment between 500 and 700 °C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment a
Publikováno v:
Applied Surface Science. :193-196
Epitaxial growth of Si on SiH 3 CH 3 reacted Ge(1 0 0) using ultraclean hot-wall low-pressure chemical vapor deposition (LPCVD), and the intermixing between Si and Ge during heat treatment has been investigated. By SiH 3 CH 3 reaction at 450 °C, Si
Publikováno v:
Applied Surface Science. :156-160
Surface reaction of CH 3 SiH 3 on the Ge(100) and Si(100) surfaces was investigated in the low-temperature region of 400–500°C using ultraclean hot-wall low-pressure chemical vapor deposition (CVD) systems, where CH 3 SiH 3 was supplied at a parti
Autor:
Junichi Murota, T. Noda, Takashi Matsuura, A. Ichikawa, T. Takatsuka, Y. Hirose, Masaki Fujiu, T. Ikeda, A. Moriya, Masao Sakuraba
Publikováno v:
Thin Solid Films. 369:167-170
Epitaxial growth of Si 1− x − y Ge x C y epitaxial films on Si(100) has been investigated at 550°C in a SiH 4 -GeH 4 -CH 3 SiH 3 -H 2 gas mixture using an ultraclean hot-wall low pressure chemical vapor deposition (LPCVD) system. With increasing
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C. 57:3547-3550
This paper proposes an actuator consisting of a piezoelectric element, two electromagnets and a spring for controlling displacement of flexible beam with large deflections. The voltage pattern for the piezoelectric element and the electric current pa
Autor:
T. Shano, K. Kanebako, M. Kosakai, Y. Komatsu, S. Yoshikawa, Masaki Fujiu, Michio Nakagawa, A. Inoue, K. Iwasa, T. Takahashi, H. Tabata, Katsuaki Isobe, S. Hoshi, Hiroto Nakai, K. Kanazawa, Noboru Shibata, N. Motohashi, T. Shimizu, Mitsuaki Honma, Kenichi Imamiya, Hiroshi Maejima, K. Nagaba, T. Kawaai
Publikováno v:
2007 IEEE Symposium on VLSI Circuits.
A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed. This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash with the same design rule. N