Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Masakazu Sanada"'
Autor:
Minghan Xu, Yosuke Hanawa, Saad Akhtar, Atsushi Sakuma, Jianliang Zhang, Junichi Yoshida, Masakazu Sanada, Yuta Sasaki, Agus P. Sasmito
Publikováno v:
International Journal of Heat and Mass Transfer. 212:124182
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2343bcfdbabb0e7e2e533ef82f58827
https://doi.org/10.1016/j.ijheatmasstransfer.2023.124182
https://doi.org/10.1016/j.ijheatmasstransfer.2023.124182
Autor:
Hirokazu Munakata, Takeshi Matsuda, Masakazu Sanada, Kuniko Teraki, Kiyoshi Kanamura, Akira Izumi, Koji Furuichi, Kenta Hiramatsu
Publikováno v:
Journal of Power Sources. 256:244-249
The cells applied with a three-dimensionally (3D) patterned Li 4 Ti 5 O 12 (LTO) electrode showed good performance as a rechargeable lithium-ion battery. The 3D-patterned electrode was fabricated with a printing apparatus and has many lined patterns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df32275e4999eb734be1eced6ba317af
https://doi.org/10.1016/j.jpowsour.2014.01.067
https://doi.org/10.1016/j.jpowsour.2014.01.067
Autor:
Masakazu Sanada, Takeshi Matsuda, Akira Izumi, Hirokazu Munakata, Kuniko Teraki, Kiyoshi Kanamura, Koji Furuichi, Kenta Hiramatsu
Publikováno v:
Electrochimica Acta. 79:218-222
A three-dimensionally (3D) patterned Li 4 Ti 5 O 12 electrode was fabricated by using a micro printing technology. Composite slurry including Li 4 Ti 5 O 12 , acetylene black, poly(vinylidene difluoride) and N-methyl pyrolidone was applied onto a cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30dc7f695f65c26490556775668f2b56
https://doi.org/10.1016/j.electacta.2012.07.001
https://doi.org/10.1016/j.electacta.2012.07.001
Autor:
Naruki Yamauchi, Shigeyoshi Arai, Yasuo Iizuka, Haruyuki Tanigaki, Masakazu Sanada, Junji Tsunetoshi
Publikováno v:
J. Chem. Soc., Faraday Trans.. 90:1307-1312
Oxygen isotope exchange between C 18O2 and MoO3 has been examined in connection with the catalytic oxidation of C 16O with 18O2 on MoO3. Oxide ions at mobile and immobile sites on MoO3, which oxidize CO in the catalytic oxidation, were found to work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0dc5bb5fc5e54c766fe57d84b0ce0f1
https://doi.org/10.1039/ft9949001307
https://doi.org/10.1039/ft9949001307
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
In immersion lithography process, film stacking architecture will be necessary to avoid top coat film peeling. To achieve suitable stacking architecture for immersion lithography process, an EBR process that delivers tightly controlled film edge posi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fff0cadf5ed3dd81550c87d7bbd3f25a
https://doi.org/10.1117/12.814079
https://doi.org/10.1117/12.814079
Publikováno v:
SPIE Proceedings.
The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2bc7ea02213996251c1d68f4ac7498
https://doi.org/10.1117/12.797082
https://doi.org/10.1117/12.797082
Autor:
Shuichi Yasuda, Tadashi Miyagi, Tomohiro Goto, Masakazu Sanada, Kazuhito Shigemori, Masaya Asai, Osamu Tamada, Masashi Kanaoka
Publikováno v:
SPIE Proceedings.
In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064a184b243577580f5c9e2d89d8203c
https://doi.org/10.1117/12.772411
https://doi.org/10.1117/12.772411
Autor:
Stephan Sinkwitz, Manuel Jaramillo, Gene Everad Parris, Masakazu Sanada, Patrick Wong, S. Wang, Minoru Sugiyama
Publikováno v:
SPIE Proceedings.
With the introduction of immersion lithography into IC manufacturing for the 45nm node, pattern collapse and line width roughness (LWR) remain critical challenges that can be addressed by implementing formulated surface conditioners. Surface conditio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832d9c0613f48e54e810662ac660d6e8
https://doi.org/10.1117/12.712188
https://doi.org/10.1117/12.712188
Autor:
Masakazu Sanada, Akira Kawai, Tomohiro Goto, Osamu Tamada, Takayoshi Niiyama, Takahiro Moriuchi
Publikováno v:
SPIE Proceedings.
Recently, pattern collapse is becoming one of the critical issues in semiconductor manufacturing and many works have been done to solve this issue 1 ) 2 ). Since pattern collapse occurs when outer force onto the resist pattern such as surface tension
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f36137a80f94d25ef8da2a9b8e33402
https://doi.org/10.1117/12.651999
https://doi.org/10.1117/12.651999
Autor:
Masakazu Sanada, Masahiko Harumoto, Akira Kawai, Osamu Tamada, Shimpei Hori, Takayoshi Niiyama
Publikováno v:
SPIE Proceedings.
In immersion lithography technique, some defects such as a watermark and a nanoscale bubble have been focused as the serious problems to be solved. In order to clarify the formation mechanism of the watermark, the in-situ observation of the drying be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d958fdc48840f3aec5f05d76123f14fc
https://doi.org/10.1117/12.655420
https://doi.org/10.1117/12.655420