Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Masakazu Hamaji"'
Autor:
Taigo Fujii, Amir Moqanaki, Christof Zillner, Harald Höller, Elmar Platzgummer, Masakazu Hamaji
Publikováno v:
Photomask Technology 2021.
The semiconductor industry's migration to EUV for the leading-edge nodes provides significant advantages and poses new challenges for the mask writers. The mask quality requirements for the leading-edge process technology call for ILT (Inverse Lithog
Autor:
Christoph Hennerkes, David Rio, Chris Spence, Masakazu Hamaji, Dai Tsunoda, Adam Lyons, Maxence Delorme, Yohei Torigoe, Tom Wallow
Publikováno v:
Extreme Ultraviolet Lithography 2020.
In this contribution we describe a simulation and experimental study investigating the impact of mask non-ideality and Mask Process Correction (MPC) model choices on Optical Proximity Correction (OPC) model accuracy for an EUV use case. We describe s
Publikováno v:
Photomask Technology 2018.
EUV lithography draws increasing attention and its expectation is rising. For instance, replacing a triple patterning with ArF immersion lithography to EUV single patterning may reduce 50% of cost and 25% of cycle time [1]. At the same time, the impo
Autor:
Shuichiro Ohara, Stanislas Baron, Yasuaki Horima, Yasuko Saito, Been-Der Chen, Chris Spence, Zhang Quan, Vincent Shu, Masakazu Hamaji
Publikováno v:
Photomask Technology.
To achieve the ultimate resolution and process control from an optical (193i 1.35NA) scanner system, it is desirable to be able to exploit both source and mask degrees of freedom to create the imaging conditions for any given set of patterns that com
Autor:
Shuichiro Ohara, Dai Tsunoda, Brian Dillon, Masakazu Hamaji, Vincent Arnoux, Yi-Hsing Peng, Stanislas Baron, Yi Zou, Tomoyuki Muramatsu, Xiaolong Zhang
Publikováno v:
SPIE Proceedings.
Demand for mask process correction (MPC) is growing for leading-edge process nodes. MPC was originally intended to correct CD linearity for narrow assist features difficult to resolve on a photomask without any correction, but it has been extended to
Publikováno v:
Proceedings of SPIE; 8/26/2018, Vol. 10810, p108101H-1-108101H-9, 9p
Publikováno v:
SPIE Proceedings.
The increasing complexity of RET solutions has increased the shot count for advanced photomasks. In particular, the introduction of the inverse lithography technique (ILT) brings a significant increase in mask complexity and conventional fracturing a
Publikováno v:
SPIE Proceedings.
Data volume is getting larger every day in Mask Data Preparation (MDP). In the meantime, faster data handling is always required. MDP flow typically introduces Distributed Processing (DP) system to realize the demand because using hundreds of CPU is