Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Masakatsu Yoshida"'
Autor:
Daisuke, Miyagishima, Masakatsu, Yoshida, Nobuhiro, Yamada, Kaori, Kinjo, Naoto, Fujita, Hiromasa, Suzuki, Kaoru, Sugimura, Michio, Kubota, Akihiko, Nakagawa, Yasuharu, Kikuchi, Masami, Shinozaki
Publikováno v:
Internal Medicine. 62:1473-1478
Hiatal hernia is a common condition in elderly patients, but the additional presence of prolapse of the pancreas is extremely rare. We herein report an 89-year-old woman who presented with liver function disorders and abdominal pain. Her laboratory t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::931c7dd5dfee0f2c13002b0748ca7cba
https://doi.org/10.2169/internalmedicine.0537-22
https://doi.org/10.2169/internalmedicine.0537-22
Publikováno v:
Tetsu-to-Hagane. 99:32-39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d44e67b75dc6646239b9d51d3ee673
https://doi.org/10.2355/tetsutohagane.99.32
https://doi.org/10.2355/tetsutohagane.99.32
Publikováno v:
Tetsu-to-Hagane. 99:564-572
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d74c2bbefd0b5776877f69ec22947594
https://doi.org/10.2355/tetsutohagane.99.564
https://doi.org/10.2355/tetsutohagane.99.564
Publikováno v:
Tetsu-to-Hagane. 99:642-650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0189a6b6f58a403d45f06f4a0c5c18dc
https://doi.org/10.2355/tetsutohagane.99.642
https://doi.org/10.2355/tetsutohagane.99.642
Autor:
Masakatsu Yoshida, Yuuji Abe
Publikováno v:
Journal of Japan Institute of Light Metals. 44:240-245
The tensile tests of 5182 alloys had been carried out at the warm temperature. The tensile and yield strength decrease, and the local elongation increased with higher temperature. But the elongation to the yield strength, the degree of serration and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc1e53d79ae4293956a0625d0abf21d0
https://doi.org/10.2464/jilm.44.240
https://doi.org/10.2464/jilm.44.240
Autor:
Genshu Fuse, Katsuya Ishikawa, Morio Inoue, Yoshiki Fukuzaki, Takashi Namura, Masakatsu Yoshida, Norishige Aoki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:306-310
Ion implantation charging has been studied by evaluation of the threshold voltage shift (ΔVt) of EEPROM devices. The threshold voltage shifted proportionally with the variation of the electron emission current. This method allows the uniformity of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dca66fb94468b44b393c9bda7e477b7b
https://doi.org/10.1016/0168-583x(93)95066-e
https://doi.org/10.1016/0168-583x(93)95066-e
Publikováno v:
Japanese Journal of Applied Physics. 31:L1422
Damage in silicon crystals implanted with various doses at different acceleration energies has been characterized by Raman scattering and photothermal wave techniques. Depth profiles of the damage in the implanted silicon crystals have been estimated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e179ad06ca9d7ee2cbe0cec6832442
https://doi.org/10.1143/jjap.31.l1422
https://doi.org/10.1143/jjap.31.l1422
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :317-320
This paper describes the depth profiles of secondary defects of As+ and BF2+ implanted silicon measured using a thermal wave technique. To measure the depth profiles a novel stripping technique using anodic oxidation was used with a thermal wave tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c194a23a1d302719a749f3847ed50f
https://doi.org/10.1016/0168-583x(89)90194-8
https://doi.org/10.1016/0168-583x(89)90194-8
Publikováno v:
Journal of The Electrochemical Society. 130:2271-2274
Ion‐implanted polycrystalline silicon layers were annealed using the radiation from a graphite heater. 0.4 μm thick polycrystalline silicon films implanted with 40 keV P+ ions to a dose of were annealed in vacuum at 1000° – 1200°C for 10 – 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877219aea3d6e0fdbab6801a032c9852
https://doi.org/10.1149/1.2119567
https://doi.org/10.1149/1.2119567