Zobrazeno 1 - 10
of 138
pro vyhledávání: '"Masahisa Fujino"'
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 141:39-43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436cfbfbf9e1484844bf244a97693371
https://doi.org/10.1541/ieejsmas.141.39
https://doi.org/10.1541/ieejsmas.141.39
Autor:
Masahisa Fujino, Yuuki Araga, Hiroshi Nakagawa, Yuta Takahashi, Kenji Nanba, Ayami Yamaguchi, Akira Miyata, Takanori Nishi, Katsuya Kikuchi
Publikováno v:
Journal of Applied Physics. 133:015301
Superconducting devices with high-density integration are required for applications, such as high-performance detectors and quantum computing. Here, the direct bonding of Nb electrodes at room temperature using a surface activated bonding method was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80536a2d5250cff8d8a5b8ad17cf18d
https://doi.org/10.1063/5.0131227
https://doi.org/10.1063/5.0131227
Autor:
Noboru Miyata, Kenji Takahashi, Tetsuya Ueda, Katsuya Kikuchi, Masahisa Fujino, Tsukasa Miyazaki
Publikováno v:
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
We investigated the interface structural properties of direct bonded SiCN substrate using neutron reflectometry (NR). NR results suggest that direct bonded SiCN requires annealing process immediately after bonding process, because of water penetratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5b9603208de8931d06445eb17daabb
https://doi.org/10.1109/ltb-3d53950.2021.9598423
https://doi.org/10.1109/ltb-3d53950.2021.9598423
Publikováno v:
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d36b1563b7e559c369aa21d7fec13c
https://doi.org/10.1109/ltb-3d53950.2021.9598360
https://doi.org/10.1109/ltb-3d53950.2021.9598360
Autor:
Masahisa Fujino
Publikováno v:
Vacuum and Surface Science. 62:672-675
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf11253065a3a75f1c511416ec8cd253
https://doi.org/10.1380/vss.62.672
https://doi.org/10.1380/vss.62.672
Publikováno v:
JOM. 71:3057-3065
Low-energy Xenon flash pulses permit sintering of spray-pyrolyzed submicron Ag particles (SMPs) into conductive tracks with acceptable electrical resistivity (16.7 μΩ cm) on polyimide film in several seconds without extra heating. Mixed with Ag nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::768693a49fe861cdab69ebfda69e6f97
https://doi.org/10.1007/s11837-019-03595-5
https://doi.org/10.1007/s11837-019-03595-5
Autor:
Masahisa Fujino, Takashi Matsumae, Katsuya Kikuchi, Hiroshi Nakagawa, Yuta Takahashi, Tohru Taino
Publikováno v:
2021 International Conference on Electronics Packaging (ICEP).
Deposited Nb wafers were bonded directly by surface activated bonding method at room temperature. In this research, several criteria for bonding has been investigated: Surface roughness should be less then Ra = 1.0 nm, and etching time is 50 s or mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef128e79bc4653abbbc549a3a12c052
https://doi.org/10.23919/icep51988.2021.9451932
https://doi.org/10.23919/icep51988.2021.9451932
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 7:1713-1720
This paper reports a new technology for bonding and debonding of glass substrates to handle ultrathin glass substrates in the fabrication process of display devices. Based on the surface activated bonding method, the glass substrates were bonded usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16127c3877007033ea68a19849dda052
https://doi.org/10.1109/tcpmt.2017.2731621
https://doi.org/10.1109/tcpmt.2017.2731621
Publikováno v:
Applied Surface Science. 416:1007-1012
Room temperature GaN-Si direct wafer bonding was done by surface activated bonding (SAB). At first, a feasibility study using GaN template has been done. Then, crystal-face dependence of the bonding results for freestanding GaN substrate has been inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f4d7d0ff04cfab3691baea59e32abe
https://doi.org/10.1016/j.apsusc.2017.04.247
https://doi.org/10.1016/j.apsusc.2017.04.247
Publikováno v:
Applied Surface Science. 414:163-170
Cu/adhesive hybrid bonding is an attractive approach to three-dimensional (3D) integration because it provides direct Cu Cu vertical interconnects and high mechanical stability. However, Cu/adhesive hybrid bonding at below 200 °C is still challengin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd77121814d47ebb259bac2e310810ea
https://doi.org/10.1016/j.apsusc.2017.03.168
https://doi.org/10.1016/j.apsusc.2017.03.168