Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Masahiro Sumiya"'
Planned Maintenance Schedule Update Method for Predictive Maintenance of Semiconductor Plasma Etcher
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:296-300
In a semiconductor plasma etcher, it is becoming increasingly necessary to improve productivity by reducing unplanned equipment maintenance. Thus, predictive maintenance (PdM) is typically conducted using equipment data to predict the failure timing,
Autor:
Laura Pahren, Jay Lee, Yoshito Kamaji, Pin Li, Masahiro Sumiya, Masaki Ishiguro, Xiaodong Jia
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:183-189
Particle contamination in the dry etching chamber is one of the major issues in the semiconductor manufacturing. Particles on the wafer surface may cause wafer defects and yield loss. Therefore, particle monitoring is important to support contaminati
Publikováno v:
Advanced Etch Technology for Nanopatterning VIII.
Plasma etching requires the nanometer scale precision control of the etched structures without particle generation which is a key factor of the defect and the yield ratio. Nevertheless, process drifts [1] and particles flaking off from the chamber wa
Autor:
Kazuyuki Ikenaga, Makoto Nawata, Shigeru Shirayone, Masaki Ishiguro, Tomoyuki Tamura, Masahiro Sumiya
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:247-252
Particle transport under Coulomb force during plasma on and off periods was studied in a plasma of mixed gases of Ar, O 2 , and N 2 generated by a microwave electron cyclotron resonance plasma etching system. The relationship between the number of pa
Publikováno v:
Japanese Journal of Applied Physics. 41:856-859
The effect of reduction of the electron shading charge buildup using pulsed microwave plasma was evaluated. The gate oxide voltage due to the electron shading effect was measured directly using a charging current measurement electrode on which a Si c
Autor:
Seiichi Watanabe, Hitoshi Tamura, Ken Yoshioka, Masahiro Sumiya, Omoto Yutaka, Tatsumi Mizutani
Publikováno v:
Japanese Journal of Applied Physics. 41:346-351
High-frequency measurements of plasma parameters used in circuit model simulation were carried out to analyze charging damage. The bulk plasma impedance was measured by varying the bias voltage of probes with an impedance analyzer. The sheath condens
Publikováno v:
Ecology and Civil Engineering. 5:23-40
Studies on the fishways of Nagaragawa Estuary Barrage and migratory fish species that passed the barrage were conducted when the estuary barrage project was planned, before and during the construction of the barrage, and before the barrage went into
Autor:
Toshiyuki Goto, Mitsuaki Kakinuma, Yoshii Nishino, Masahiro Sumiya, Kazuyoshi Ikuta, Masahiko Kishi, Kohji Ohki, Masuyo Nakai, Takuro Kimura
Publikováno v:
The Journal of general virology. 73
Under conditions in which a clonal cell line (M10) isolated from a human T cell lymphotrophic virus type I-transformed MT-4 cell line was completely killed by infection with wild-type human immunodeficiency virus type 1 (HIV-1), equivalent M10 cells
Publikováno v:
Japanese Journal of Applied Physics. 43:1149
The effect of Push–Pull bias (phase-controlled bias) on the plasma potential and sputtering at the chamber-wall was investigated. It was found that the plasma potential could be controlled unrelated to the geometrical configuration of the chamber b
Autor:
Seiichi Watanabe, Ken Yoshioka, Takafumi Tokunaga, Hitoshi Tamura, Masahiro Sumiya, Tatsumi Mizutani
Publikováno v:
Japanese Journal of Applied Physics. 39:662
A charging damage measurement electrode was used to model device structures. The charge passed through gate-oxide films (Q p) was measured in a cavity-resonator-type electron cyclotron resonance (ECR) plasma etcher for 12-inch wafers and the reductio