Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Masahiro Hikita"'
Autor:
Manabu Yanagihara, Masaya Mannoh, Hideyuki Okita, Saichiro Kaneko, Michinobu Tsuda, Hisayoshi Matsuo, Kenichiro Tanaka, Yasuhiro Uemoto, Akihiko Nishio, Masayuki Kuroda, Keiichi Matsunaga, Masahiro Hikita, Takahiro Sato, Ayanori Ikoshi, Tatsuo Morita
Publikováno v:
IEEE Transactions on Electron Devices. 64:1026-1031
A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventional gate recess process, the initial AlGaN ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af144d407aea0dc71d8ca99caac6e43
https://doi.org/10.1109/ted.2017.2653847
https://doi.org/10.1109/ted.2017.2653847
Publikováno v:
IRPS
Anomalous turn off (ATO) is observed for the GaN-based normally-off Gate injection Transistor (GIT) with a threshold voltage having smaller than 0.7 V. On the other hand, ATO is not observed for the GIT with a threshold voltage larger than 0.7 V. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96c438b6d56f22583093dd4c92a8791
https://doi.org/10.1109/irps.2019.8720560
https://doi.org/10.1109/irps.2019.8720560
Autor:
Takeshi Harada, Keiichi Matsunaga, Kanda Yusuke, Masahiro Hikita, Katsuhiko Onishi, Koji Utaka, Yasuhiro Uemoto
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
A new technology for manufacturing a GaN FET is proposed and demonstrated. A Ti/AI/Ti stack contacting to p-GaN is used as a gate metal. Surprisingly, Al forms a single crystal on p-GaN. The single crystal formation is due to an epitaxial growth of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::278f4830b0275e16b5aa5e55941177f5
https://doi.org/10.1109/iitc.2018.8454843
https://doi.org/10.1109/iitc.2018.8454843
Autor:
Masahiro Hikita, Masahiro Toki, Yasuhiro Uemoto, Hiroto Yamagiwa, Ayanori Ikoshi, Kenichiro Tanaka, Kazuki Suzuki, Daijiro Arisawa, Tetsuzo Ueda, Manabu Yanagihara
Publikováno v:
IRPS
Reliability of a GaN-based Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under continuous switching operation is investigated to extract the lifetime under a practical switching application. Switching lifetimes are deduced by varying ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9643103594f017b842e32d508e74848e
https://doi.org/10.1109/irps.2018.8353594
https://doi.org/10.1109/irps.2018.8353594
Autor:
Masahiro Hikita, Tatsuya Sakamoto, Hideki Sugimoto, Hiroyuki Miyake, Janusz Gregoliński, Hiroshi Tsukube
Publikováno v:
Inorganic Chemistry. 55:633-643
Three chiral ligands with variable denticity, H2L2-H2L4, conjugated by N,N'-ethylenebis[N-methyl-(S)-alanine] and an ortho-heterosubstituted aromatic amine, were newly synthesized as analogues of previously reported H2L1. Four contracted-Λoxo cobalt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da8940ca3eafd21f594663cc296f28d7
https://doi.org/10.1021/acs.inorgchem.5b01902
https://doi.org/10.1021/acs.inorgchem.5b01902
Autor:
Kenichiro Tanaka, Tetsuzo Ueda, Tatsuo Morita, Tsuguyasu Hatsuda, Masahiro Ishida, Masahiro Toki, Masahiro Hikita, Ayanori Ikoshi, Kazuki Yokoyama, Yasuhiro Uemoto, Manabu Yanagihara
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Reliability tests on 600V-rated GaN-based normally-off hybrid-drain-embedded Gate Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT reveals that the lifetime is dependent on the leakage current before the relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec0fb458dcfbd5b478782126e5cbf61
https://doi.org/10.1109/irps.2017.7936308
https://doi.org/10.1109/irps.2017.7936308
Autor:
Takahiro Sato, Keiichi Matsunaga, Yasuhiro Uemoto, Hideyuki Okita, Hisayoshi Matsuo, Masahiro Hikita, Akihiko Nishio, Masaya Mannoh
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A new gate recess process technology has been implemented in normally off GaN based gate injection transistors (GITs) on Si substrate, in order to realize the process stability. In this process, compared to conventional recessed gate structure, the A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71bdafe530f9a0ba13fad50fdf53dc1
https://doi.org/10.1109/ispsd.2016.7520768
https://doi.org/10.1109/ispsd.2016.7520768
Autor:
Hiroshi Tsukube, Masumi Itazaki, Hiroshi Nakazawa, Hiroyuki Miyake, Masahiro Hikita, Hideki Sugimoto
Publikováno v:
Chemistry - A European Journal. 14:5393-5396
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87b6ecc7d6f8a1515b4a40965385c6b6
https://doi.org/10.1002/chem.200800625
https://doi.org/10.1002/chem.200800625
Autor:
Tetsuzo Ueda, Hiroaki Ueno, Yasuhiro Uemoto, Manabu Yanagihara, Hisayoshi Matsuo, Daisuke Ueda, Hidetoshi Ishida, Tsuyoshi Tanaka, Masahiro Hikita
Publikováno v:
IEEE Transactions on Electron Devices. 54:3393-3399
We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0bd6c87d327145da11319705569bfeb
https://doi.org/10.1109/ted.2007.908601
https://doi.org/10.1109/ted.2007.908601
Autor:
Yasuhiro Uemoto, Kenichiro Tanaka, Satoru Takahashi, Saichiro Kaneko, Tetsuzo Ueda, Tatsuo Morita, Masahiro Hikita, Ayanori Ikoshi, Masayuki Kuroda, Hideyuki Okita, Manabu Yanagihara
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor (GIT). The additional p-GaN region enables hole injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ce3ddd44c9661fef4c2577b66cd733
https://doi.org/10.1109/ispsd.2015.7123384
https://doi.org/10.1109/ispsd.2015.7123384