Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Masahiro Echizen"'
Autor:
Li Lu, Masahiro Echizen, Takashi Nishida, Yasuaki Ishikawa, Kiyoshi Uchiyama, Yukiharu Uraoka
Publikováno v:
AIP Advances, Vol 2, Iss 3, Pp 032111-032111-6 (2012)
Assisted by UV/O3 annealing, InZnO thin-film transistors (TFTs) fabricated at a low temperature of 290°C showed a high field-effect mobility of 2.19 cm2/(V·s). This value was almost the same as that of InZnO TFTs annealed at 700°C without UV/O3 as
Externí odkaz:
https://doaj.org/article/2137fd9d86ff40b19bbc5003c16d06aa
Autor:
Li Lu, Kiyoshi Uchiyama, Yasuaki Ishikawa, Takashi Nishida, Masahiro Echizen, Yukiharu Uraoka
Publikováno v:
Applied Physics A. 112:425-430
Sol–gel-derived SrTa2O6 thin films were fabricated at a low temperature of 500 °C. To improve their leakage current properties, additional UV/O3-assisted annealing was performed from room temperature to 290 °C. UV/O3 treatment at 290 °C gave a v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abedb7db9e1c9f34e504f8b24469a473
https://doi.org/10.1007/s00339-012-7425-1
https://doi.org/10.1007/s00339-012-7425-1
Publikováno v:
Ferroelectrics. 421:82-87
Compared crystalline SrTa2O6 (STA), amorphous STA thin film showed a lower dielectric constant (ϵ), but better voltage linearity. Among the amorphous thin films, 700°C annealed thin film showed a high ϵ of about 40, the lowest leakage current of 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a4fea90d165e22e7d95cfeb9c6a4788
https://doi.org/10.1080/00150193.2011.594354
https://doi.org/10.1080/00150193.2011.594354
Publikováno v:
Transactions of the Materials Research Society of Japan. 35:177-180
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c2504b78102e18bf9013beb8365aa3
https://doi.org/10.14723/tmrsj.35.177
https://doi.org/10.14723/tmrsj.35.177
Publikováno v:
IEICE Transactions on Electronics. :1511-1515
Ba0.5Sr0.5Ta2O6 (BSTA) thin film was successfully fabricated on a Pt/SiO2/TiO2/Si substrate using the Sol-Gel method. Fundamental electrical properties of the BSTA thin film were investigated using metal-insulator-metal (MIM) structure. No diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e968dd7caa7c183944673ee22a67cc
https://doi.org/10.1587/transele.e93.c.1511
https://doi.org/10.1587/transele.e93.c.1511
Autor:
Takashi Nishida, Masahiro Echizen, Koichi Kubo, Kiyoshi Uchiyama, Hiroaki Takeda, Tadashi Shiosaki
Publikováno v:
Key Engineering Materials. :502-505
In order to perform the growth position control, PbTiO3 (x=0) (PTO) nanocrystals were deposited on atomically flat and non-atomically flat -Al2O3 substrates by RF magnetron sputtering. The atomically flat substrates with atomic steps and terrace a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba6161a4430a19ec63358659c503511
https://doi.org/10.4028/www.scientific.net/kem.421-422.502
https://doi.org/10.4028/www.scientific.net/kem.421-422.502
Autor:
Yoji Mizutani, Takashi Nishida, Masahiro Echizen, Tadashi Shiosaki, Takashi Nozaka, Hiroaki Takeda, Bhakdisongkhram Gun, Kiyoshi Uchiyama
Publikováno v:
Japanese Journal of Applied Physics. 47:7494-7499
We examined the impact that the electrode/(Ba,Sr)TiO3 (BST) interface structures have on electric properties by investigating the electrical conduction mechanism of the BST thin-film capacitors with Pt and Au top electrodes. The BST thin films were p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a411c4adef1469d2ecaf6fa7a8beadef
https://doi.org/10.1143/jjap.47.7494
https://doi.org/10.1143/jjap.47.7494
Autor:
Kiyoshi Uchiyama, Tadashi Shiosaki, Takashi Nishida, Takashi Nozaka, Masahiro Echizen, Hiroaki Takeda, Takeshi Fujii
Publikováno v:
Japanese Journal of Applied Physics. 47:7545-7548
High-quality epitaxially grown (Pb,La)(Zr,Ti)O3 (PLZT) films were successfully fabricated on single-crystalline sapphire (012) substrates using a modified sol–gel process. The crystallographic relationship between the PLZT film and the sapphire sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354cc2982517728c4d904935b3baf5a7
https://doi.org/10.1143/jjap.47.7545
https://doi.org/10.1143/jjap.47.7545
Autor:
Kiyoshi Uchiyama, Takashi Nozaka, Hiroaki Takeda, Bhakdisongkhram Gun, Takashi Nishida, Yoji Mizutani, Takuya Tsuchikawa, Tadashi Shiosaki, Masahiro Echizen
Publikováno v:
Key Engineering Materials. 388:191-194
The (Ba0.6Sr0.4)TiO3 (BST) thin films were formed on a Pt bottom electrode/glazed-Al2O3 substrates by a chemical solution deposition (CSD) method. The BST films were annealed at temperatures between 600 and 800°C in a rapid thermal annealing (RTA) p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfbc00fbf3a0302abfaeb8dede92df4f
https://doi.org/10.4028/www.scientific.net/kem.388.191
https://doi.org/10.4028/www.scientific.net/kem.388.191
Autor:
Hiroaki Takeda, Takuya Tsuchikawa, Takashi Nishida, Tadashi Shiosaki, Takashi Nozaka, Masahiro Echizen, Kiyoshi Uchiyama
Publikováno v:
Key Engineering Materials. 388:183-186
(Ba,Sr)TiO3 (BST) thin films have been investigated because of significant interest in device applications of their nonlinear dielectric properties such as in frequency tunable devices. We have investigated frequency conversion devices using BST film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156ef39431af053f249535337a25ecc3
https://doi.org/10.4028/www.scientific.net/kem.388.183
https://doi.org/10.4028/www.scientific.net/kem.388.183