Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Masahiko KUSAKA"'
Publikováno v:
Journal of Materials Research. 22:1275-1280
We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in w
Autor:
Chihiro Kamezawa, Z. An, T. Shinagawa, T. Fujisawa, S. Azatyan, Masaaki Hirai, Motohiro Iwami, Masahiko Kusaka
Publikováno v:
Applied Surface Science. 249:362-366
We have studied interface electronic structure of transition metal film (Fe, Zr)/4H–SiC (substrate) contact systems by using a photoemission electron microscopy (PEEM) and a soft X-ray fluorescence spectroscopy (SXFS). PEEM can show surface micro-
Publikováno v:
Applied Surface Science. 237:607-611
Photoemission electron microscopy (PEEM) has been applied to systems such as Fe, Cu, Ti and Zr on SiC substrates. The products on the surface that result from SiC decomposition and reaction with the deposited metal films can be well imaged by PEEM us
Autor:
Chihiro Kamezawa, Joselito P. Labis, Hirofumi Namatame, Masaki Taniguchi, Motohiro Iwami, Masaaki Hirai, Masahiko Kusaka
Publikováno v:
Thin Solid Films. :107-111
Soft X-ray emission spectroscopy (SXES) and photoemission electron microscopy (PEEM) were performed to study the solid phase reaction in the Ti(film)/Si(substrate) system with Mo interlayer. SXES is a suitable technique for non-destructive buried-lay
Publikováno v:
Applied Surface Science. 237:105-109
Studying of consecutive room temperature (RT) Mn deposition onto Si(111) surface was carried out by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM) methods. We investigated that the growth of manganese atoms on the Si(111) s
Autor:
Hirofumi Namatame, Masaki Taniguchi, Joselito P. Labis, Masahiko Kusaka, Motohiro Iwami, J. Oh, Masaaki Hirai
Publikováno v:
Applied Surface Science. 237:170-175
The √3 x √3R30° reconstructed surface of 6H-SiC(0001) was exposed to N 2 O from 10 L to ∼10 6 L at sample temperatures ranging from 500 to 800 °C. The Si 2p emission spectra showed fast oxide formation for the first 10 L of N 2 O exposure and
Autor:
Takashi Shinagawa, Chihiro Kamezawa, S.G. Azatyan, Z. An, Masaaki Hirai, Masahiko Kusaka, Motohiro Iwami, T. Fujisawa
Publikováno v:
Scopus-Elsevier
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 2:230-233
PEEM (photoemission electron microscopy), AES (Auger electron spectroscopy) and SXES (soft X-ray emission spectroscopy) studies have been carried out on Cu(thin film)/3C-SiC(substrate) contact systems. The PEEM studies have clarified both lateral dif
Publikováno v:
Surface Science. 547:193-200
We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on
Non-destructive Analysis of Buried Interfaces and Surface Layers: X-Ray Emission Spectroscopic Study
Publikováno v:
Japanese Journal of Applied Physics. 42:4756-4759
Soft X-ray emission spectroscopy (SXES) and extended X-ray emission fine structure (EXEFS) studies have been carried out on a heat-treated thin-film(Ni)/substrate(Si, SiC) contact system using a conventional X-ray micro-analysis (XMA) apparatus. We h