Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masahide Tadokoro"'
Autor:
Takashi Yamauchi, Masashi Enomoto, Shinichiro Kawakami, Philippe Foubert, Yuya Kamei, Kathleen Nafus, Sano Yohei, Makoto Muramatsu, Masahide Tadokoro, Marc Demand, Akihiro Sonoda
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
EUV lithography has been brought into mass production. To enhance the yield, improvements in critical dimension (CD) stability, and defectivity still remain of utmost importance. In order to enhance the defectivity performance on contact hole pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94c007702577dc93d7ff6ad129526b20
https://doi.org/10.1117/12.2514930
https://doi.org/10.1117/12.2514930
Autor:
Yuya Kamei, Philippe Foubert, Kathleen Nafus, Takeshi Shimoaoki, Shinichiro Kawakami, Masahide Tadokoro, Hashimoto Yusaku, Akihiro Sonoda, Masashi Enomoto
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018.
EUV lithography will to be brought into mass production soon. To enhance the yield, improvements in critical dimension (CD) stability, and defectivity still remain of utmost importance. In order to enhance the defectivity ability on contact hole (CH)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60dffb7ccbeb86cb3f60b2dedbb28d21
https://doi.org/10.1117/12.2500896
https://doi.org/10.1117/12.2500896
Autor:
Yuya Kamei, Yohei Sano, Takashi Yamauchi, Shinichiro Kawakami, Masahide Tadokoro, Masashi Enomoto, Makoto Muramatsu, Kathleen Nafus, Akihiro Sonoda, Demand, Marc, Foubert, Philippe
Publikováno v:
Proceedings of SPIE; 1/20/2019, Vol. 10957, p109571P-1-109571P-7, 7p
Autor:
Masahide Tadokoro, Yoshitaka Konishi, Megumi Jyousaka, Kunie Ogata, Shinichi Shinozuka, Tamotsu Morimoto
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturing technology has shifted towards finer design rules, and demands for critical dimension uniformity (CDU) of resist patterns have become greater than ever. One of the methods for improving Resist Pattern CDU is to control pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7872bd3563b50250a034a04d108dca91
https://doi.org/10.1117/12.771865
https://doi.org/10.1117/12.771865
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturing technology has shifted towards finer design rules, and demands for critical dimension uniformity (CDU) of resist patterns have become greater than ever. One of the methods for improving CDU of resist pattern is to control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cfae33e6599c0ce153ebb2b06250db4
https://doi.org/10.1117/12.771854
https://doi.org/10.1117/12.771854
Autor:
Takashi Murakami, Masahide Tadokoro, Taisaku Nakata, Yoshitaka Konishi, Takayuki Uchiyama, Kensuke Taniguchi, Megumi Jyousaka
Publikováno v:
SPIE Proceedings.
This paper examines improvement in post-etching gate critical dimension (CD) uniformity by post exposure bake (PEB) temperature control. Although intra-wafer and inter-wafer resist CD uniformity is improved by PEB temperature optimization, intra-wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ee37aab32ee9f3854a5c97e341e8f3
https://doi.org/10.1117/12.771548
https://doi.org/10.1117/12.771548