Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Masaharu Nagai"'
Publikováno v:
Humanitäres Völkerrecht. 4:35
To reach the United Nations’ Sustainable Development Goals, enhancing the protection of the natural environment is indispensable. This paper explores how the International Law Commission’s Draft Principles on the Protection of the Environment in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0bd4200d77e74a4f3e49283cee7ccb0
https://doi.org/10.35998/huv-2021-0003
https://doi.org/10.35998/huv-2021-0003
Autor:
Masayuki Sakakura, Yuki Hata, Masaharu Nagai, Daigo Ito, Yutaka Okazaki, Tsutomu Yamamoto, Yoshitaka Yamamoto, Suguru Hondo, Shinya Sasagawa, Takashi Hamada, Shunpei Yamazaki, Hideomi Suzawa, Daisuke Matsubayashi, Ryo Arasawa, Yoshiyuki Kobayashi
Publikováno v:
IEEE Electron Device Letters. 36:309-311
In this letter, we report the electrical characteristics of a crystalline oxide semiconductor, especially $\boldsymbol {c}$ -axis aligned crystalline In–Ga–Zn–O (CAAC-IGZO) field-effect transistors (FETs) having a surrounded-channel structure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3164ee1d98484ba96088de2c49c4e401
https://doi.org/10.1109/led.2015.2399911
https://doi.org/10.1109/led.2015.2399911
Autor:
Shunpei Yamazaki, Akihisa Shimomura, Masahiro Mitani, Yoshitaka Yamamoto, Masaharu Nagai, Keiichi Sekiguchi, Takashi Hamada, Takayuki Ikeda, Munehiro Kozuma, Katsuyuki Suga, Hideto Ohnuma
Publikováno v:
SID Symposium Digest of Technical Papers. 43:359-362
We succeeded in formation of single crystal silicon (Low Temperature Single-Crystal Silicon: LTSS) over non-alkali glass. In our prototyped high definition 458 ppi AMOLED display using this LTSS as a backplane, low power consumption of drivers (about
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e17fcbfa14f32bd8481db8314b5230d
https://doi.org/10.1002/j.2168-0159.2012.tb05790.x
https://doi.org/10.1002/j.2168-0159.2012.tb05790.x
Publikováno v:
Journal of Crystal Growth. 191:679-684
The optical characteristics of ZnCdSe/ZnSSe single quantum wells (SQW) were studied using photoluminescence (PL) measurements. The PL intensity depends on the strain of ZnSSe layers and the thickness and Cd content of ZnCdSe layers. Using this depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f00206da2c073f9b7ca418ffd4ecb9e0
https://doi.org/10.1016/s0022-0248(98)00380-7
https://doi.org/10.1016/s0022-0248(98)00380-7
Publikováno v:
Phosphorus Research Bulletin. 4:53-58
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db57a1747b0a86bcc275ce290550484b
https://doi.org/10.3363/prb1992.4.0_53
https://doi.org/10.3363/prb1992.4.0_53
Publikováno v:
Journal of Crystal Growth. 127:532-535
In GaAs/GaAs single strained quantum wells have been grown by molecular beam epitaxy on (100)-GaAs substrates misoriented by 0°, 4°, and 8° toward (111)A in a wide temperature Ts range of 520–660°C. We have found that the shift of photoluminesc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::946724b5df19f2a723412aa29e7b9319
https://doi.org/10.1016/0022-0248(93)90677-o
https://doi.org/10.1016/0022-0248(93)90677-o
Publikováno v:
Journal of Crystal Growth. 127:54-57
Uniform GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers have been grown by molecular beam epitaxy at high temperatures, where the desorption of Ga or In cannot be neglected. This is achieved by the uniform temperature distribution in our newly deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798c2ec07797e9e9fca00210a9dc105b
https://doi.org/10.1016/0022-0248(93)90576-i
https://doi.org/10.1016/0022-0248(93)90576-i
Publikováno v:
ChemInform. 24
Barium titanate thick films 10-70 μm thick were obtained using a unique electrophoretic deposition technique, which utilizes a mixed ethanol-acetylacetone suspension as the dispersive medium. The capacitance of the BaTiO 3 films was measured as 25-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3247729279fc6ce271822eb58fa3915
https://doi.org/10.1002/chin.199314005
https://doi.org/10.1002/chin.199314005
Publikováno v:
Surface Science. 267:8-12
AlGaAs layers have been grown on GaAs(100) and 0.5° -misoriented GaAs(111)B substrates by molecular beam epitaxy using As 4 and As 2 . The quality of (111)B-oriented AlGaAs becomes poorer when more As-stabilized growth conditions are employed; such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d683b62b147bdbed7e19dcf72b20b115
https://doi.org/10.1016/0039-6028(92)91076-n
https://doi.org/10.1016/0039-6028(92)91076-n
Autor:
Suguru Hondo, Takashi Okuda, Yuto Yakubo, Kiyoshi Kato, Shunpei Yamazaki, Masumi Nomura, Tatsuya Onuki, Masayuki Sakakura, Masaharu Nagai, Yutaka Okazaki, Yuki Hata, Yoshitaka Yamamoto, Takanori Matsuzaki, Shuhei Nagatsuka, Tomoaki Atsumi
Publikováno v:
Japanese Journal of Applied Physics. 54:04DD07
A dynamic oxide semiconductor random access memory (DOSRAM) array that achieves reduction in storage capacitance (Cs) and decrease in refresh rate has been fabricated by using a c-axis aligned crystalline oxide semiconductor (CAAC-OS) transistor (L =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04f2de3f8e7afe0d721e4a41a96e59d
https://doi.org/10.7567/jjap.54.04dd07
https://doi.org/10.7567/jjap.54.04dd07