Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Masafumi Ozawa"'
Autor:
Satoshi Fujiwara, Tsuyoshi Ohno, Tsuyoshi Tojyo, Motohiro Takase, Noriaki Nishi, Hiroshi Yoshida, Takashi Kobayashi, Tadashi Taniguchi, Kiyoshi Manoh, Kiyoshi Yamauchi, Masafumi Ozawa, Masao Ikeda
Publikováno v:
Japanese Journal of Applied Physics. 42:880-884
We report the first integrated optical head device using a blue-violet laser diode (LD), which is a key device for realizing a small and thin Blu-ray Disc drive. While integrating seven optical elements and semiconductor chips into one device by adop
Autor:
Hiroshi Yoshida, Katsunori Yanashima, Masao Ikeda, Hiroshi Nakajima, Masafumi Ozawa, Tsuyoshi Tojyo, Takao Miyajima, Satoru Kijima, Tomonori Hino, Toshimasa Kobayashi, Shigeki Hashimoto, Kenji Funato, Takeharu Asano, Shiro Uchida, Takashi Yamaguchi, Shigetaka Tomiya, Tsunenori Asatsuma
Publikováno v:
Materials Science and Engineering: B. 82:248-252
We report our recent progress on GaN-based laser diodes (LDs) which will be applied as a light source in high-density optical storage systems. Recently we achieved a lifetime of more than 500 hours under continuous-wave operation with a constant powe
Autor:
Tomonori Hino, Takeharu Asano, Takao Miyajima, Hiroshi Yoshida, Masao Ikeda, Shigeki Hashimoto, Hiroshi Nakajima, Toshimasa Kobayashi, Takashi Yamaguchi, Tsunenori Asatsuma, Shigetaka Tomiya, Masafumi Ozawa
Publikováno v:
Journal of Crystal Growth. 221:640-645
The buried-ridge structure was introduced to GaN-based laser diodes for the purpose of realizing an index-guided structure in order to control the difference of effective refractive indexes between the inside and outside of the lasing area and to sta
Autor:
Masao Ikeda, Takeharu Asano, Tsuyoshi Tojyo, Etsuo Morita, Katsunori Yanashima, Shiro Uchida, Tsuneyoshi Aoki, Satoru Kijima, Masafumi Ozawa, Shinichi Ansai, Toshimasa Kobayashi, Tsunenori Asatsuma, Tomonori Hino, Yoshifumi Yabuki, Katsuyoshi Shibuya, Shinro Ikeda, Motonobu Takeya
Publikováno v:
Journal of Crystal Growth. 221:646-651
Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure metal-organic chemical vapor deposition (MOCVD). In order to determine the effect of ELO-G
Publikováno v:
Journal of Crystal Growth. :768-772
We estimated minority carrier diffusion length and lifetime of GaN and ZnSe using the electron-beam-induced current method. The minority carrier diffusion length of both p-type and n-type GaN is about 0.9 μm, which is comparable to that of ZnSe. The
Autor:
Norikazu Nakayama, K. Nakano, Shigetaka Tomiya, Toyoharu Ohata, Hiroyuki Okuyama, Masafumi Ozawa, S. Itoh, Masao Ikeda, Satoshi Matsumoto, Akira Ishibashi
Publikováno v:
physica status solidi (b). 187:279-283
ZnSe based laser diodes exhibit best initial performances such as low threshold current with ZnCdSe/ZnSSe/ZnMgSSe SCH-SQW structure. The device lifetime is improved with the ZnCdSe/ZnSSe/ZnMgSSe SCH-MQW structure. Laser emission of 471 nm wavelength
Autor:
K. Nakano, Norikazu Nakayama, S. Itoh, Hiroyuki Okuyama, Akira Ishibashi, Toyoharu Ohata, Masafumi Ozawa, Masao Ikeda, Yoshifumi Mori, E. Kato
Publikováno v:
Electronics Letters. 30:568-570
Continuous-wave (CW) operation up to 323K at 1 mW and up to 30 mW at room temperature has been demonstrated for 507nm ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure (SCH) gain-guided laser diodes. The room temperature CW threshold current
Publikováno v:
Applied Physics Letters. 64:1120-1122
Low resistance Ohmic contacts of Au(Pt)Pd to p‐ZnTe were studied. The specific contact resistance of these contacts depends strongly on the annealing temperature and the Pd layer thickness. The specific contact resistance, measured by the transmiss
Autor:
Hiroyuki Okuyama, Yoshifumi Mori, Akira Ishibashi, Katsuhiro Akimoto, Masafumi Ozawa, M. Ukita
Publikováno v:
Applied Physics Letters. 63:2082-2084
We have experimentally investigated refractive indices n of ZnxMg1−xSySe1−y, using the ellipsometry method and reflection‐spectrum measurement. The samples are epitaxial films of undoped ZnxMg1−xSySe1−y grown by molecular beam epitaxy on se
Autor:
Teruyuki Miyajima, Yuko Morinaga, H. Okuyama, Futoshi Hiei, Katsuhiro Akimoto, Masafumi Ozawa
Publikováno v:
Physica B: Condensed Matter. 191:133-135
For decades, wide gap II-VI semiconductors have been intensively studied for application to visible light emitting devices. Recently some research groups have fabricated laser diodes that emit blue-green light from a ZnCdSe/ZnSSe single and multi qua