Výsledky vyhledávání - "Masachika TOGUCHI"

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

Autor: Keisuke Uemura, Masachika Toguchi, Taketomo Sato, Yuto Komatsu

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 32:483-488

This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light waveleng

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc2c96f8d41f5741bffb44f77fd3e55c
https://doi.org/10.1109/tsm.2019.2934727

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Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Autor: Yoshinobu Narita, Naomi Asai, Takehiro Yoshida, Tomoyoshi Mishima, Noboru Fukuhara, Hiroshi Ohta, Fumimasa Horikiri, Kazuki Miwa, Masachika Toguchi, Taketomo Sato

Publikováno v: IEEE transactions on semiconductor manufacturing. 32(4):489-495

Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than $1~\mu \text{m}$ , with high accuracy. The aspect ratio (depth/width) of a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a99f6238520b3c637b540d12db563b73
http://hdl.handle.net/2115/76692

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Communication—Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect

Autor: Taketomo Sato, Masachika Toguchi, Kazuki Miwa

Publikováno v: Journal of The Electrochemical Society. 166:H510-H512

Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab837bf0a099842be35ed03eba8b25f2
https://doi.org/10.1149/2.0551912jes

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Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

Autor: Taketomo Sato, Masachika Toguchi, Kazuki Miwa, Michihito Shimauchi, Junichi Motohisa

Publikováno v: Applied Physics Express. 14:111003

We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selective

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5647ab94289c3c966ae367300cae9607
https://doi.org/10.35848/1882-0786/ac2d45

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Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

Autor: Yoshinobu Narita, Masachika Toguchi, Kazuki Miwa, Osamu Ichikawa, Ryota Isono, Fumimasa Horikiri, Noboru Fukuhara, Taketomo Sato, Takeshi Tanaka

Publikováno v: Journal of Applied Physics. 130(2):24501

Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thick

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4810a3871f8ca342e499a22941f28acd
http://hdl.handle.net/2115/82407

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Fabrication of Recessed-Gate AlGaN/GaN Hemts Utilizing Contactless Photo-Electrochemical (CL-PEC) Etching

Autor: Masachika Toguchi, Takeshi Tanaka, Noboru Fukuhara, Ryota Isono, Kazuki Miwa, Taketomo Sato, Osamu Ichikawa, Fumimasa Horikiri, Yoshinobu Narita

Publikováno v: ECS Meeting Abstracts. :1818-1818

AlGaN/GaN HEMTs are promising devices to attain both high-power and high-speed switching operation for the use in next-generation power electronics circuits. From the viewpoint of fail-safe and low-power consumption design, however it is necessary to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba0f07f03378712b395c6ce762be8993
https://doi.org/10.1149/ma2020-02261818mtgabs

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Thermal-assisted contactless photoelectrochemical etching for GaN

Autor: Noboru Fukuhara, Naomi Asai, Takehiro Yoshida, Fumimasa Horikiri, Kazuki Miwa, Hiroki Ogami, Masachika Toguchi, Yoshinobu Narita, Hiroshi Ohta, Taketomo Sato, Tomoyoshi Mishima

Publikováno v: Applied Physics Express. 13:046501

Advanced contactless photoelectrochemical etching for GaN was conducted under the condition that the sulfate radicals (SO4 ·−) as the oxidizing agent were mainly produced from the S2O8 2− ions by heat. The generation rate of SO4 ·− was determ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20c9cb5fe8d16066b4588f01b7579cde
https://doi.org/10.35848/1882-0786/ab7e09

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