Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Masaaki Ogino"'
Autor:
Masaaki Tachioka, Toshiyuki Takamatsu, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Tetsuji Arai, Haruo Nakazawa, Keisuke Arimoto, Kiyokazu Nakagawa, Masaaki Ogino, Junji Yamanaka
Publikováno v:
Journal of Materials Science and Chemical Engineering. :35-41
We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::886347d4b906d3edc4c52d98aa87d449
https://doi.org/10.4236/msce.2017.51005
https://doi.org/10.4236/msce.2017.51005
Publikováno v:
Materials Science in Semiconductor Processing. 16:923-927
The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si 3 N 4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b27185bf4b3ffef46a503ff39fdc6f
https://doi.org/10.1016/j.mssp.2013.01.020
https://doi.org/10.1016/j.mssp.2013.01.020
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N182-N186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba85b92a959884a1fcdb3d680713df9d
https://doi.org/10.1149/2.024309jss
https://doi.org/10.1149/2.024309jss
Publikováno v:
IEEJ Journal of Industry Applications. 2:323-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3083b5f548879ba3059217812fc833a7
https://doi.org/10.1541/ieejjia.2.323
https://doi.org/10.1541/ieejjia.2.323
Autor:
Masaaki Ogino, Ryu Hasunuma, Yoshiyuki Sugahara, Hitoshi Kuribayashi, Kikuo Yamabe, Mitsuru Sometani
Publikováno v:
ECS Transactions. 19:403-413
Tetraethylorthosilicate (Si(OC2H5)4) (TEOS) SiO2 has been used for the internal isolation dielectric layers in integrated circuits, a gate dielectric in poly crystalline-silicon thin-film transistors (poly-Si TFTs). Recently, TEOS-SiO2 has been also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1571802a9e7c16050ac82ca1563df8b4
https://doi.org/10.1149/1.3122105
https://doi.org/10.1149/1.3122105
Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere
Publikováno v:
MRS Proceedings. 1591
The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94396c13557b2d8adf8b46621c591a8
https://doi.org/10.1557/opl.2014.294
https://doi.org/10.1557/opl.2014.294
Autor:
Yoshikazu Takahashi, Tsunehiro Nakajima, Hiroki Wakimoto, Masaaki Ogino, Haruo Nakazawa, David Hongfei Lu
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7de71dfe13741e976a55a2c74c1af975
https://doi.org/10.1109/ispsd.2011.5890804
https://doi.org/10.1109/ispsd.2011.5890804
Publikováno v:
Journal of Applied Polymer Science. 50:283-293
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95da924dff1bd38aa6a9ae58e3d6f93
https://doi.org/10.1002/app.1992.070500023
https://doi.org/10.1002/app.1992.070500023
Publikováno v:
MRS Proceedings. 989
High-temperature silicon dioxide chemical vapor deposition (HTOCVD), using SiH2Cl2 and N2O, can realize dense and conformal oxide film, not only on large size silicon wafers, but even inside of microscopic silicon trenches, at high-temperature around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e749d8803d3d804c1ea7ad03ead58c
https://doi.org/10.1557/proc-0989-a08-08
https://doi.org/10.1557/proc-0989-a08-08
Autor:
Mitsuo Koshi, Tadashi Januma, Masakazu Sugiyama, Ryosuke Shimizu, Masaaki Ogino, Yukihiro Shimogaki
Publikováno v:
MRS Proceedings. 716
Thickness uniformities of poly-crystalline silicon thin films, deposited by a commercial LPCVD reactor, were investigated through a phenomenological and elementary reaction analysis. To understand the deposition rate and its profile in radius directi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73e6900bafe4accfc6b550d37f452c07
https://doi.org/10.1557/proc-716-b11.9
https://doi.org/10.1557/proc-716-b11.9