Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Masaaki Hatano"'
Publikováno v:
Japanese Journal of Administrative Science. 28:279-304
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18bed25dd23a69f566bb239c10eff6f
https://doi.org/10.5651/jaas.28.279
https://doi.org/10.5651/jaas.28.279
Publikováno v:
Japanese Journal of Applied Physics. 43:6957-6962
The electromigration (EM) of Al-0.5 wt%Cu/Nb-based liner dual damascene (DD) interconnects is investigated for the first time. It is found that EM-induced voids nucleate in the line around the via at the cathode end of the line and their number decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82803f730488f53ebe8fe1ea45ffa190
https://doi.org/10.1143/jjap.43.6957
https://doi.org/10.1143/jjap.43.6957
Autor:
Masaaki Hatano, T. Oki, Atsuko Sakata, Masahiko Hasunuma, Takashi Kawanoue, N. Yamada, Masaki Yamada, S. Kato, Hiroshi Toyoda, T. Fujimaki, Kazuyuki Higashi, Junichi Wada, H. Yamaguchi, Naofumi Nakamura, Y. Yano
Publikováno v:
2008 International Interconnect Technology Conference.
This paper proposes highly reliable, low resistance and cost effective Cu interconnect system for 45nm CMOS device and beyond. Overhang formation and Cu line resistance increase by deposition process variation are serious problems for titanium (Ti) b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981982eae28e9d26cf1f7197f24eb2b1
https://doi.org/10.1109/iitc.2008.4546956
https://doi.org/10.1109/iitc.2008.4546956
Autor:
Masaaki Hatano, Junichi Wada, Y. Enomoto, K. Honda, Naofumi Nakamura, K. Akiyama, N. Matsunaga, N. Miyawaki, T. Fujimaki, Keiichiro Yoshida, H. Kawashima, K. Higashi, Fumiyoshi Matsuoka, T. Nishioka, Masahiko Hasunuma, S. Yamada, M. Iwai, Toshiaki Hasegawa
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Moisture induced via failure (MIVF) is studied for 45nm interconnect technology using porous low-k films. Test patterns are designed to examine the layout dependence of the MIVF. Some fundamental and important layout dependencies of the via resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af92606b4df8a8cec6be74367b3b28e9
https://doi.org/10.1109/iedm.2005.1609301
https://doi.org/10.1109/iedm.2005.1609301
Autor:
K. lmamizu, Shingo Takahashi, T. Yosho, Toshiaki Hasegawa, Soichi Yamashita, A. Yamada, Hisashi Kaneko, Masaki Yamada, Masahiko Hasunuma, Atsuko Sakata, Masaaki Hatano, H. Yamaguchi, Junichi Wada, Kazuyuki Higashi, Seiichi Omoto
Publikováno v:
2006 International Interconnect Technology Conference.
This paper elucidated for the first time that titanium (Ti) is an excellent barrier metal (BM) material from the stand point of cost and performance, especially for the porous low-k ILD materials. Both stress induced voiding (SIV) suppression and one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e60b6a1ab9020a67450f048adf551b
https://doi.org/10.1109/iitc.2006.1648658
https://doi.org/10.1109/iitc.2006.1648658
Autor:
N. Hayasaka, K. Yoshida, Hisashi Kaneko, Takashi Yoda, Masaaki Hatano, M. Okazaki, S. Shibasaki
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A very unique multiple pattern arrangement for low-k/Cu interconnect characterization method is introduced. Several hundreds of different shape 4-point probe Kelvin/via/interconnect test patterns are created. With these "Sea of Kelvin" multiple-patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::117516ad0a48bb74c667166611154c3f
https://doi.org/10.1109/iitc.2004.1345749
https://doi.org/10.1109/iitc.2004.1345749
Conference
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