Zobrazeno 1 - 10
of 222
pro vyhledávání: '"Masaaki, Kuzuhara"'
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 797-807 (2022)
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/G
Externí odkaz:
https://doaj.org/article/1f5d9dc0ce6a4a54a88802bd65a88721
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://doaj.org/article/802bb96512794ca8844a04843f7916f6
Autor:
Biplab Sarkar, Shunpei Yamashita, Aakash Jadhav, Takashi Ozawa, Akio Wakejima, Yoshio Honda, Sourajeet Roy, Joel T. Asubar, Masaaki Kuzuhara, Manato Deki, Ali Baratov, Hiroshi Amano, Shugo Nitta
Publikováno v:
IEEE Transactions on Electron Devices. 68:6059-6064
Conventional lumped small signal circuit (SSC) models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are derived from the low frequency portion of the experimentally measured Y-parameters. Consequently, these mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14bc07b6a0bac54b32a6dc931938cbff
https://doi.org/10.1109/ted.2021.3119528
https://doi.org/10.1109/ted.2021.3119528
Autor:
Hiroshi Amano, Joel T. Asubar, Masaaki Kuzuhara, Biplab Sarkar, Akio Wakejima, Ali Baratov, Aakash Jadhav, Sourajeet Roy, Yoshio Honda, Takashi Ozawa, Manato Deki, Shunpei Yamashita
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::133ac0f1a175ff46d868408d4a3d50a8
https://ieeexplore.ieee.org/document/9434402/
https://ieeexplore.ieee.org/document/9434402/
Publikováno v:
IEEE Electron Device Letters. 41:693-696
We report on an Al2O3 /AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After analyzing the possibility of obtaining high threshold voltage ( ${V}_{\text {th}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc103fd53946c76f4f4cd5f58e6ddf20
https://doi.org/10.1109/led.2020.2985091
https://doi.org/10.1109/led.2020.2985091
Publikováno v:
IEICE Transactions on Electronics. :186-190
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9aff12ca9b17950a6722f2aba5aacb3
https://doi.org/10.1587/transele.2019ecp5011
https://doi.org/10.1587/transele.2019ecp5011
Autor:
Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3378e9ae22664d34ec48e8e835e60d37
https://doi.org/10.1109/imfedk53601.2021.9637625
https://doi.org/10.1109/imfedk53601.2021.9637625
Autor:
Mary Clare Sison Escaño, Mutsunori Uenuma, Hirokuni Tokuda, Zenji Yatabe, Melanie David, Yukiharu Uraoka, Joel T. Asubar, Masahiko Tani, Masaaki Kuzuhara
Publikováno v:
Applied Surface Science. 481:1120-1126
We conducted X-ray photoelectron spectroscopy (XPS) and first-principles calculations based on density functional theory (DFT) to confirm the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface. We note that the Ga 3d XPS p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::121b0549655388ade889688ce4ea1bad
https://doi.org/10.1016/j.apsusc.2019.03.196
https://doi.org/10.1016/j.apsusc.2019.03.196
Publikováno v:
Materials Science Forum. 963:259-262
Phase contrast microscopy (PCM) technique was demonstrated as the effective non-destructive discrimination method of TSDs and TEDs in 4H-SiC epitaxial layers in comparison with conventional polarized light microscopy, PL topography, KOH etch pit insp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af3140d00d7cafe78a5e66f331b77db7
https://doi.org/10.4028/www.scientific.net/msf.963.259
https://doi.org/10.4028/www.scientific.net/msf.963.259
Autor:
Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys, Tetsu Kachi, Boguslawa Adamowicz, Akio Wakejima, Masaaki Kuzuhara, Akio Yamamoto, Joel T. Asubar
Publikováno v:
Applied Physics Express. 15:104002
We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al2O3/AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f5a76d3f9560b4dc9a2993a5a8b937b
https://doi.org/10.35848/1882-0786/ac8f13
https://doi.org/10.35848/1882-0786/ac8f13