Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Marzieh Bakhtiary-Noodeh"'
Autor:
Daryl Key, Edward Letts, Chuan-Wei Tsou, Mi-Hee Ji, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Russell Dupuis, Tadao Hashimoto
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium A
Externí odkaz:
https://doaj.org/article/1576668a9ca04c5d8082f83c74188a0c
Autor:
Chuan-Wei Tsou, Russell D. Dupuis, Zhiyu Xu, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Minkyu Cho, Hoon Jeong, Shyh-Chiang Shen
Publikováno v:
IEEE Transactions on Electron Devices. 68:2759-2763
We report high-performance homojunction GaN avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. High-quality p-i-n GaN layers were grown using metalorganic chemical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cddaf09965101ffb480195027c5d2f
https://doi.org/10.1109/ted.2021.3069153
https://doi.org/10.1109/ted.2021.3069153
Autor:
Chuan-Wei Tsou, Minkyu Cho, Russell D. Dupuis, Can Cao, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Hoon Jeong, Zhiyu Xu
Publikováno v:
Journal of Electronic Materials. 50:4462-4468
Front-illuminated GaN-based p-i-n ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition on a free-standing GaN substrate. X-ray diffraction measurements confirm the high crystal quality of the grown struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e6b99de25304ee4e3e5fe0d9827a16
https://doi.org/10.1007/s11664-021-08981-x
https://doi.org/10.1007/s11664-021-08981-x
Autor:
Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Russell D. Dupuis, Minkyu Cho, Zhiyu Xu, Theeradetch Detchphrom
Publikováno v:
ECS Transactions. 98:49-59
Gallium-nitride and related materials have become suitable semiconductor platforms for next-generation power electronic devices. This materials system leverages unique properties of wider energy bandgap, higher carrier mobility, and ultrashort carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f764b2b9848fbbd489e36c7bcded90a1
https://doi.org/10.1149/09806.0049ecst
https://doi.org/10.1149/09806.0049ecst
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9409a53c4af6226ca2129e2917e18307
https://doi.org/10.2139/ssrn.4175177
https://doi.org/10.2139/ssrn.4175177
Publikováno v:
Journal of Crystal Growth. 602:126962
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3fad963b182972117bf16478eb1f1a
https://doi.org/10.1016/j.jcrysgro.2022.126962
https://doi.org/10.1016/j.jcrysgro.2022.126962
Autor:
Shyh-Chiang Shen, Russell D. Dupuis, Zhiyu Xu, Marzieh Bakhtiary-Noodeh, Minkyu Cho, N. Otte, Theeradetch Detchprohm, Hoon Jeong
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
We report the development of high-performance GaN ultraviolet avalanche photodiode technology with uniform dark current characteristics. These devices exhibited high-avalanche-gain (>105) in linear-mode operation in 6x6 array form with pixel sizes up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed66b0c36cbcaa112ffaa368e96e612
https://doi.org/10.1109/rapid51799.2021.9521404
https://doi.org/10.1109/rapid51799.2021.9521404
Autor:
Russell D. Dupuis, Parminder Ghuman, Marzieh Bakhtiary-Noodeh, Zhiyu Xu, Sachidananda Babu, A. Nepomuk Otte, John W. Zeller, Minkyu Cho, Theeradetch Detchprohm, Hoon Jeong, Ashok K. Sood, Shyh-Chiang Shen
Publikováno v:
Gallium Nitride Materials and Devices XVI.
Front-illuminated p-i-n GaN-based ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition (MOCVD) on 25 mm dia. bulk Ammono® n-GaN substrate having a low etch pit density (EPD) less than 5 × 104 [cm-2] and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2921bc12337943d7042db8906e79793
https://doi.org/10.1117/12.2576888
https://doi.org/10.1117/12.2576888
Autor:
Hoon Jeong, Minkyu Cho, Zhiyu Xu, Frank Mehnke, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Nepomuk Otte, Russell D. Dupuis
Publikováno v:
Journal of Applied Physics. 131:103102
A top-illuminated deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f04ce744c91302993d643964f2a4cf0
https://doi.org/10.1063/5.0073515
https://doi.org/10.1063/5.0073515
This review presents an overlook over the genesis, fundamental, and different improvement aspects of the electrophoretic deposition (EPD) technique, especially in waterborne dispersions. Colloidal dispersions and chemistry of the system play an impor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d6d45ba620556ecab9a7eb4323d4fb
https://doi.org/10.1016/b978-0-12-814201-1.00008-1
https://doi.org/10.1016/b978-0-12-814201-1.00008-1
