Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Maryam Nayeri"'
Publikováno v:
مجله مدل سازی در مهندسی, Vol 20, Iss 68, Pp 47-58 (2022)
The present paper investigates the electronic and optical behavior of monolayer gallium sulfide as a transition metal monochalcogenide, doped with IV and V group atoms of the periodic table. The calculations are performed in the SIESTA software packa
Externí odkaz:
https://doaj.org/article/65257dd4629f471f98689434b60a7998
Autor:
Mahdieh Nayeri, Maryam Nayeri
Publikováno v:
مجله مدل سازی در مهندسی, Vol 18, Iss 63, Pp 41-50 (2021)
In this paper, the design of penternary circuits based on graphene nanoribbon FET (GNRFET) is presented. The employed logic of the penternary corresponds to the Galois logic. The HSPICE-compatible model and 15-nanometer technology have been used to s
Externí odkaz:
https://doaj.org/article/ed69df75eece482eb69c1c7645c590e2
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 5, Iss 4, Pp 67-86 (2020)
Structural, electronic, and optical properties of one-dimensional (1D) SnGeand SnC with two types (armchair and zigzag) and different widths are studied by usingfirst-principles calculations. The atoms of these structures in edges are passivated byhy
Externí odkaz:
https://doaj.org/article/5889f0207385443b990c07b96ebbc5b0
Autor:
Reza Pourtajabadi, Maryam Nayeri
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 4, Iss 1, Pp 39-50 (2019)
The quantum-dot cellular automata (QCA) is considered as an alternative tocomplementary metal oxide semiconductor (CMOS) technology based on physicalphenomena like Coulomb interaction to overcome the physical limitations of thistechnology. The decode
Externí odkaz:
https://doaj.org/article/71d25e9e5c1c46e9a6dc383e7ceee3b0
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 3, Iss 1, Pp 15-26 (2018)
This paper investigates a novel design of penternary logic gates usingcarbon nanotube field effect transistors (CNTFETs). CNTFET is a suitable candidate forreplacing MOSFET with some useful properties, such as the capability of having thedesired thre
Externí odkaz:
https://doaj.org/article/005ca156c48e4aeabc71211bdcd17acc
Autor:
Ali Reza Talebi, Farzaneh Fesahat, Esmat Mangoli, Jalal Ghasemzadeh, Maryam Nayeri, Fatemeh Sadeghian-Nodoshan
Publikováno v:
Iranian Journal of Reproductive Medicine, Vol 14, Iss 3, Pp 199-204 (2016)
Background: Etiology of more than half of Recurrent Spontaneous Abortion. The etiology of more than 50 percent of Recurrent Spontaneous Abortions (RSA) cases has been remained unexplained. It is supposed that RSA may have "paternal effect" due to sup
Externí odkaz:
https://doaj.org/article/67776ea54f814fecae5ce1499ffdcd30
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 015915 (2020)
In this paper, the electronic and optical properties of various point defects in gallium sulfide (GaS) and gallium selenide (GaSe) are studied. Various vacancy defects in each monolayer GaX (X = S, Se) include V _X , V _Ga , 2V _X , 2V _Ga , 1V _Ga 1
Externí odkaz:
https://doaj.org/article/70db064e23f440a6a234566b68bfaa05
Autor:
Seyed Morteza Seifati, Nasim Tabibnejad, Maryam Nayeri, Mohammad Mehdi Heidari, Ali Reza Talebi
Publikováno v:
Revista Internacional de Andrología. 18:7-13
Objectives The aim of this study was to evaluate polymorphisms of sperm protamine genes and their effects on the result of CMA3 staining in varicocele men. Material and methods In a case control study, 128 patients with male infertility due to varico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::734f82c95c33f4c941691ebcd2d368e4
https://doi.org/10.1016/j.androl.2018.07.005
https://doi.org/10.1016/j.androl.2018.07.005
Publikováno v:
AEU - International Journal of Electronics and Communications. 157:154417
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d26d0b47659b990ce9df0b2aaa1f88
https://doi.org/10.1016/j.aeue.2022.154417
https://doi.org/10.1016/j.aeue.2022.154417
Autor:
Erfan Abbasian, Maryam Nayeri
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:071001
The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale circuits design is challenging because there are several adjustable parameters that need to be selected carefully. In this paper, we evaluate the impact of changes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38589641a0700e91f75a4d627df550b
https://doi.org/10.1149/2162-8777/ac7c39
https://doi.org/10.1149/2162-8777/ac7c39