Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Mary Anne, Tupta"'
Autor:
Xia Liu, Arnob Islam, Ning Yang, Bradley Odhner, Mary Anne Tupta, Jing Guo, Philip X.-L. Feng
Publikováno v:
ACS Nano. 15:19733-19742
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0fcc14277d9f0aa7a3e3970ac88df13
https://doi.org/10.1021/acsnano.1c07169
https://doi.org/10.1021/acsnano.1c07169
Autor:
Xia, Liu, Arnob, Islam, Ning, Yang, Bradley, Odhner, Mary Anne, Tupta, Jing, Guo, Philip X-L, Feng
Publikováno v:
ACS nano. 15(12)
Atomically thin semiconductors such as transition metal dichalcogenides have recently enabled diverse devices in the emerging two-dimensional (2D) electronics. While scalable 2D electronics demand monolithic integrated circuits consisting of compleme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3de8d1ea20008ea55994ab1ba4fb224a
https://pubmed.ncbi.nlm.nih.gov/34913336
https://pubmed.ncbi.nlm.nih.gov/34913336
Autor:
Kan Xie, Steven A Hartz, Virginia M Ayres, Benjamin W Jacobs, Reginald M Ronningen, Albert F Zeller, Thomas Baumann, Mary Anne Tupta
Publikováno v:
Materials Research Express, Vol 2, Iss 1, p 015003 (2014)
A mathematical stability approach that enables the evaluation of the mulitvariate thermionic field emission parameters at Schottky barriers is presented. The method is general, requiring only the effective mass and relative dielectric constant for a
Externí odkaz:
https://doaj.org/article/ba2e8c8909ee418b9c0a0a290c82f927
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
In the active and growing explorations of the rapidly emerging two-dimensional (2D) electronic and optoelectronic devices based upon atomically thin semiconductors and their heterostructures, developing better understanding of electrostatic gating is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22dcc03472f75b4492fb1d118cd62ee8
https://doi.org/10.1109/nmdc.2018.8605859
https://doi.org/10.1109/nmdc.2018.8605859
Publikováno v:
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).
We report high-precision, ∼femto-Faraday-level (1fF=10−15F) measurements of capacitance-voltage (C-V) characteristics of suspended and mechanically movable silicon nanowires (SiNWs) with widths down to 50nm, which are coupled to their localized s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd6f979535030ea25cdd26301bf0f658
https://doi.org/10.1109/nano.2015.7388835
https://doi.org/10.1109/nano.2015.7388835
Autor:
Swarup Bhunia, Philip X.-L. Feng, Rui Yang, Srihari Rajgopal, Vaishnavi Ranganathan, Mehran Mehregany, Mary Anne Tupta, Tina He
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We demonstrate nanoelectromechanical contact-mode switches and logic gates with high performance, enabled by cantilever-structured SiC nanoelectromechanical systems (NEMS). In full-cycle recording measurements (complete time-domain trace of every sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af6a3bf9ec2123a99eed5771c15114fe
https://doi.org/10.1109/iedm.2013.6724562
https://doi.org/10.1109/iedm.2013.6724562
Autor:
Srihari Rajgopal, Rui Yang, Swarup Bhunia, Mary Anne Tupta, Mehran Mehregany, Tina He, Philip X.-L. Feng
Publikováno v:
2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS).
We report experimental demonstration of nanoscale electromechanical contact-mode switches with clearly high comparative performance, enabled by polycrystalline silicon carbide (poly-SiC) nanomechanical cantilevers, in a three-terminal, gate-controlle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d99319010322b27e2c3c77a97a53196
https://doi.org/10.1109/memsys.2013.6474292
https://doi.org/10.1109/memsys.2013.6474292
Autor:
Thomas Baumann, Zhun Liu, R. M. Ronningen, Mary Anne Tupta, Benjamin W. Jacobs, Kan Xie, A.F. Zeller, Virginia M. Ayres, Steven Allen Hartz
Publikováno v:
MRS Proceedings. 1512
The real-time electronic performance of a gallium nitride nanowire-based field effect transistor was investigated at five-minute intervals over thirty minutes of continuous irradiation by Xenon-124 relativistic heavy ions. An initial current surge th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5cb16735c4e2a3364cb752458353195
https://doi.org/10.1557/opl.2013.275
https://doi.org/10.1557/opl.2013.275
Autor:
Laurent Duraffourg, Philip X.-L. Feng, Mary Anne Tupta, P. Andreucci, Tina He, C. Marcoux, Rui Yang
Publikováno v:
Journal of Micromechanics and Microengineering. 25:095014
This article reports on a new method of monitoring nanoscale contacts in switches based on nanoelectromechanical systems, where the contact-mode switching characteristics can be recorded with the sensitive embedded piezoresistive (PZR) strain transdu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f1d0948944327f8d81f1a5def311bd
https://doi.org/10.1088/0960-1317/25/9/095014
https://doi.org/10.1088/0960-1317/25/9/095014
Autor:
Virginia M. Ayres, Mary Anne Tupta, Kan Xie, A.F. Zeller, Thomas Baumann, R. M. Ronningen, Steven Allen Hartz, Benjamin W. Jacobs
Publikováno v:
Materials Research Express. 2:015003
A mathematical stability approach that enables the evaluation of the mulitvariate thermionic field emission parameters at Schottky barriers is presented. The method is general, requiring only the effective mass and relative dielectric constant for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca01dd1326cd814b8269020318b60b19
https://doi.org/10.1088/2053-1591/2/1/015003
https://doi.org/10.1088/2053-1591/2/1/015003