Zobrazeno 1 - 10
of 281
pro vyhledávání: '"Mary A. Crawford"'
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 318-323 (2021)
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm2 at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm2) were realized
Externí odkaz:
https://doaj.org/article/8ef17d39cb45411983348f962825013f
Autor:
Heatherlun S. Uphold, Amy Drahota, Tatiana E. Bustos, Mary Katherine Crawford, Zachary Buchalski
Publikováno v:
Journal of Clinical and Translational Science, Vol 6 (2022)
Abstract Background: The field of dissemination and implementation science has the potential to narrow the translational research-to-practice gap and improve the use of evidence-based practices (EBPs) within community-based settings. Yet, foundation
Externí odkaz:
https://doaj.org/article/5f9f4e4b366e4a999e5d517559d087b7
Autor:
Luke Yates, Brendan P. Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael L. Smith, Vincent M. Abate, Jeramy R. Dickerson, Andrew M. Armstrong, Andrew Binder, Andrew A. Allerman, Robert J. Kaplar
Publikováno v:
IEEE Transactions on Electron Devices. 69:1931-1937
Autor:
Mary H. Crawford, A. Alec Talin, Andrew A. Allerman, François Léonard, Andrew M. Armstrong, Greg Pickrell, K. C. Celio
Publikováno v:
IEEE Electron Device Letters. 42:1041-1044
Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical paramete
Autor:
Brian B. Carpenter, Meagan M. Jennings, Sumihiro Suzuki, Brittany A. Brower, Jonathan D. Moore, Zhengqi Tan, Mary E. Crawford, Michelle L. Butterworth
Publikováno v:
The Journal of Foot and Ankle Surgery. 59:997-1007
The number of women in podiatric medicine and surgery has increased steadily over the past 4 decades; however, there appears to be a large and continued gender gap with respect to representation in academic medicine and other positions of power. Nati
Autor:
Syed M. N. Hasan, Arnob Ghosh, Shantanu Saha, Shamsul Arafin, Luke J. Bissell, Mary H. Crawford, Anthony Rice, Weicheng You, Robert Bedford
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Extensive post-growth microscopic and spectroscopic characterizations are performed to leverage true potentials of high-quality hexagonal boron nitride (h-BN). Compressive residual strain between h-BN and sapphire is estimated and corroborated by ato
Autor:
A. A. Allerman, Vincent M. Abate, T. Smith, Andrew M. Armstrong, G.P. Pickrell, C. E. Glaser, Mary H. Crawford
Publikováno v:
Electronics Letters. 56:207-209
GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 μ
Autor:
Melinda A. Bowlby, Mary E. Crawford
Publikováno v:
Clinics in Podiatric Medicine and Surgery. 36:695-705
Opioid abuse has plagued the United States, with a resurgence since the early 2000s. Governmental agencies, pharmaceutical companies, patients, and physicians have all contributed to this crisis. Severe pain has been reported following foot and ankle
Publikováno v:
Clinics in Podiatric Medicine and Surgery. 36:707-716
The role of female physicians has advanced among western medicine. Women now constitute a majority within medical schools, and the number of women in podiatric medicine and surgery has increased over the last 5 decades. Conversely, female physicians
Autor:
Andrew M. Armstrong, Mary H. Crawford, A. A. Allerman, Vincent M. Abate, Karen Charlene Cross, Greg Pickrell, C. E. Glaser
Publikováno v:
Journal of Electronic Materials. 48:3311-3316
Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated,