Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Marvin Silver"'
Landmark contributions to science and mechanisms for the origin of the phenomena, and technology are rarely recognized at the time of reached important conclusions about the physical publication. Few people, even in technical areas, nature of the mat
Publikováno v:
Journal of Non-Crystalline Solids. :599-602
We have studied the effect of photodegradation on the forward bias photo-gain in a-Si:H n-i-p devices. Annealed samples show both mono-molecular and bi-molecular recombination as a function of forward bias and light intensity. However, after degradat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e2a2b4283ec6bf802d62c158ce8444
https://doi.org/10.1016/0022-3093(93)90623-6
https://doi.org/10.1016/0022-3093(93)90623-6
Publikováno v:
Journal of Non-Crystalline Solids. :331-334
A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::318c3465cc30144f98ecb9570ac98b0d
https://doi.org/10.1016/0022-3093(93)90557-e
https://doi.org/10.1016/0022-3093(93)90557-e
Publikováno v:
Journal of Non-Crystalline Solids. :595-598
The electroluminescence spectra and the carrier recombination lifetime distribution in a-Si:H devices have been measured in thin p-i-n, p-b-i-n and thick p-i-n devices in the annealed (A) and degraded (B) states. At room temperature and thin samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b6f5eb2606e59960099d758f0e1c1d
https://doi.org/10.1016/0022-3093(93)90622-5
https://doi.org/10.1016/0022-3093(93)90622-5
Publikováno v:
Journal of Non-Crystalline Solids. :339-342
We present the transient forward bias current as a function of repetition rate and reverse bias between forward bias pulses in a-Si:H p-i-n devices which have thin or thick i-layers. Little repetition rate and reverse bias effects were found in thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90843720dba3c754484e4a8b92c09675
https://doi.org/10.1016/0022-3093(93)90559-g
https://doi.org/10.1016/0022-3093(93)90559-g
Publikováno v:
Journal of Applied Physics. 73:4567-4570
We have studied the forward bias current and electroluminescence (EL) in 0.4 μm a‐Si:H p‐i‐n and p‐b‐i‐n solar cells in the temperature range of 80 K≤T≤300 K. For comparison, the data in 2 μm p‐i‐n samples are shown. The forward
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b758b959a937b58df637c33f5892709
https://doi.org/10.1063/1.352772
https://doi.org/10.1063/1.352772
Autor:
Mathieu Kemp, Marvin Silver
Publikováno v:
Philosophical Magazine Letters. 66:169-174
We present Monte Carlo results for the T=0K recombination of an electron hopping on a spatially and energetically disordered lattice under the influence of the Coulomb interaction of a stationary hole as a function of the width Σ of the energy distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d0a0a76a97a5a1ba0d3e2c741c2034
https://doi.org/10.1080/09500839208219029
https://doi.org/10.1080/09500839208219029
Autor:
Mary Ellen Zvanut, Connie S. Sosnoff, F. Richard Keene, Marvin Silver, Royce W. Murray, Nigel A. Surridge
Publikováno v:
The Journal of Physical Chemistry. 96:962-970
Rate constants for the electrical gradient driven, bimolecular electron-self-exchange reaction between Os(II) and Os(III) sites in dry, mixed-valent films of the undiluted, polymeric metal complexes poly[Os(bpy)₂(vpy)₂](BF₄)(subscript m) and po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c0384c074cbc77c8456e8fff663e4b
https://doi.org/10.1021/j100181a077
https://doi.org/10.1021/j100181a077
Autor:
Mathieu Kemp, Marvin Silver
Publikováno v:
Journal of Non-Crystalline Solids. 141:88-96
Luminescence models are critically reviewed. It is shown that they all are unsatisfactory and that some assumptions previously believed to be correct must be re-examined.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0996c71f89949ce9fe3e069b88074f
https://doi.org/10.1016/s0022-3093(05)80522-8
https://doi.org/10.1016/s0022-3093(05)80522-8
Autor:
Marvin Silver, Mathieu Kemp
Publikováno v:
Philosophical Magazine B. 63:437-442
The low-temperature rise in drift mobility in a-Si: H is interpreted in terms of a hopping model. The model predicts a critical temperature above which the transport level is pinned at the conduction band edge giving an activated behaviour of the dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56705aa029ba6dc00e277f30d38b2cf9
https://doi.org/10.1080/13642819108205948
https://doi.org/10.1080/13642819108205948