Zobrazeno 1 - 10
of 267
pro vyhledávání: '"Marvin Silver"'
Autor:
John Hernandez, Lawrence Slifkin
Publikováno v:
Physics Today. 47:77-78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e2fa52dc73491a35de1f24e02958de
https://doi.org/10.1063/1.2808587
https://doi.org/10.1063/1.2808587
Autor:
Hellmut Fritzsche, Howard M. Branz
Publikováno v:
Journal of Non-Crystalline Solids. 190:vii
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::975cdbdde2b5bd9e6656af327952c83c
https://doi.org/10.1016/0022-3093(95)80031-x
https://doi.org/10.1016/0022-3093(95)80031-x
Autor:
Gordon A. Thomas
Publikováno v:
Science. 187:640-641
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e409e3fdba5e30d96eb04405abc73c6
https://doi.org/10.1126/science.187.4177.640.b
https://doi.org/10.1126/science.187.4177.640.b
Landmark contributions to science and mechanisms for the origin of the phenomena, and technology are rarely recognized at the time of reached important conclusions about the physical publication. Few people, even in technical areas, nature of the mat
Autor:
Waldman, Steven, Springen, Karen
Publikováno v:
Newsweek. 11/16/1992, Vol. 120 Issue 20, p80. 6p. 9 Color Photographs, 1 Chart, 1 Graph.
Publikováno v:
Journal of Non-Crystalline Solids. :599-602
We have studied the effect of photodegradation on the forward bias photo-gain in a-Si:H n-i-p devices. Annealed samples show both mono-molecular and bi-molecular recombination as a function of forward bias and light intensity. However, after degradat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e2a2b4283ec6bf802d62c158ce8444
https://doi.org/10.1016/0022-3093(93)90623-6
https://doi.org/10.1016/0022-3093(93)90623-6
Publikováno v:
Journal of Non-Crystalline Solids. :331-334
A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::318c3465cc30144f98ecb9570ac98b0d
https://doi.org/10.1016/0022-3093(93)90557-e
https://doi.org/10.1016/0022-3093(93)90557-e
Publikováno v:
Journal of Non-Crystalline Solids. :595-598
The electroluminescence spectra and the carrier recombination lifetime distribution in a-Si:H devices have been measured in thin p-i-n, p-b-i-n and thick p-i-n devices in the annealed (A) and degraded (B) states. At room temperature and thin samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b6f5eb2606e59960099d758f0e1c1d
https://doi.org/10.1016/0022-3093(93)90622-5
https://doi.org/10.1016/0022-3093(93)90622-5
Publikováno v:
Journal of Non-Crystalline Solids. :339-342
We present the transient forward bias current as a function of repetition rate and reverse bias between forward bias pulses in a-Si:H p-i-n devices which have thin or thick i-layers. Little repetition rate and reverse bias effects were found in thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90843720dba3c754484e4a8b92c09675
https://doi.org/10.1016/0022-3093(93)90559-g
https://doi.org/10.1016/0022-3093(93)90559-g
Publikováno v:
Journal of Applied Physics. 73:4567-4570
We have studied the forward bias current and electroluminescence (EL) in 0.4 μm a‐Si:H p‐i‐n and p‐b‐i‐n solar cells in the temperature range of 80 K≤T≤300 K. For comparison, the data in 2 μm p‐i‐n samples are shown. The forward
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b758b959a937b58df637c33f5892709
https://doi.org/10.1063/1.352772
https://doi.org/10.1063/1.352772