Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Marvin Liao"'
Autor:
C.N. Ke, K.S. Yuan, S. B. Yang, C.C. Hsu, Harry Ku, K. C. Liu, Kirin Wang, C. C. Kuo, C. H. Kuo, Alex Kalnitsky, Marvin Liao, Chen Yi-Sheng, Ching-Fang Chen, G. C. Huang, Chang Grace, Hsin-Ting Huang
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Inductor is an essential component in Integrated Voltage Regulator(IVR) which is strongly corresponding to the efficiency of power management. In 2018 ECTC, an on-chip solenoid inductor package integrated with high-permeability magnetic(MAG) film and
Autor:
K. C. Liu, Ming-Sin Su, Clair Tsai, J. M. Chiu, Harry Ku, Y. F. Chen, C.H. Su, T. L. Yang, C. S. Liu, Kirin Wang, Chang-Ning Wang, Marvin Liao, Ponder Pang, Calvin Lu, Wei-Yih Wu, Rolance Yang, Steven Hsu
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Along with the advanced technology development, the tinier polyimide opening (PIO) and bump size are required. However, it will make the bump resistance (Rc) become higher which is closely related to the chip probing (CP) performance. In addition, th
Autor:
Marvin Liao, K. C. Liu, Yu-Cheng Wang, Ji-Jan Chen, Harry Ku, Ponder Pan, Bin-En Ho, Kirin Wang, Rung-De Wang, Y.H. Wu, Chun-Chen Liu, Yu-Nu Hsu, Calvin Lu
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Chip-on-Wafer-on-Substrate (CoWoS®) technology is a promising candidate to enable most cutting edge applications. In CoWoS® architecture, enormous micro-bumps (uBumps) are adopted for interconnecting top-dies and interposer. Comparing to traditiona
Autor:
Edward Chen, Ponder Pang, Kevin Y. Lee, Harry Ku, Wei-Yih Wu, Chen-Hsun Liu, Hsiao-Ling Huang, Marvin Liao, B. T. Chen, Tsung-Yu Yang, K. C. Liu, Y. B. Ou
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
In microelectronic packaging industry, solder joints are used to form an electrical and mechanical connection, which can be viewed as a kind of "Electrical Glue" between package elements. The integrity of solder joints plays an important role in the
Autor:
Hsiao-Ling Huang, Shawn Yang, Chang Chien-Hung, Marvin Liao, Edward Chen, Alex Kalnitsky, C. C. Kuo, T. C. Chang, K. C. Liu, C.C. Hsu, G. C. Huang, Chun-Kuang Chen, K. Y. Wu, Tsung-Yu Yang, Harry Ku, W. L. Huang
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
In 2017 ECTC, we demonstrated an on-chip thick copper "Air-core" inductor integrated with proposed WLCSP-like packaging solution. This year, the spotlight of the upgraded on-chip inductor package is two-fold. The first is a planar magnetic (MAG) film
Autor:
C. C. Chou, T. Y. Chou, Chih-Ming Chen, Alex Kalnitsky, W. L. Huang, Ching-Fang Chen, Chun-Kuang Chen, K. C. Liu, Tsung-Yu Yang, S. B. Yang, Chang Chien-Hung, G. C. Huang, Marvin Liao, Hsin-Ting Huang, Ku Chin-Yu, C.C. Hsu
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
Implementation of thick Cu inductor in IC chips has been a highly challenging task for Far-backend packaging industry. One of the major concerns is that the thicker Cu trace wrapped by re-passivation polymer layers (Polymer-1 & Polymer-2) is often ac
Autor:
Catherine Leong, Kok Seng Fam, Wei Lu, Jia Zhen Zheng, Marvin Liao, Hoon Lian Yap, Yih Shung Lin, John Sudijuno
Publikováno v:
Multilevel Interconnect Technology.
The HDP-CVD oxide deposition process has been fully investigated with the change of gas flow and RF power up to +/- 20%. The film quality is very stable with a wet etch rate ratio (WERR) of 1.5 relative to thermal oxide. The uniformity for both sputt
Publikováno v:
SPIE Proceedings.
Titanium nitride (TiN) is increasingly used in multilevel metallization processing for a variety of applications: as an antireflective coating, an aluminum diffusion barrier layer and a tungsten interconnect and plug adhesion layer. Typical process c
Publikováno v:
Japanese Journal of Applied Physics. 35:4274
Enhanced metalorganic chemical vapor deposition (MOCVD) titanium nitride (TiN:C) film with low resistivity (3)2]4). Enhancement is carried out by in-situ N2 plasma treatment of as-deposited TiN:C film and the enhanced TiN:C film has good stability: l