Výsledky vyhledávání - "Marvin Garfinkel"

Transparent metal oxide electrode CID imager

Autor: D.M. Brown, M. Ghezzo, Marvin Garfinkel

Publikováno v: IEEE Transactions on Electron Devices. 23:196-200

The use of metal oxide transparent conductive electrodes in a charge-injection device (CID) imaging array has resulted in a quantum efficiency of approximately 70 percent, uniform throughout the visible, with useful array response out to 3500 /spl Ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ca63593506b19988f6337e7bf92a420
https://doi.org/10.1109/t-ed.1976.18374

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Characteristics of doped oxides and their use in silicon device fabrication

Autor: E.A. Taft, Marvin Garfinkel, J. Wong, A. Tenney, Mario Ghezzo, D.M. Brown

Publikováno v: Journal of Crystal Growth. 17:276-287

Thin films of binary SiO 2 based mixed oxides are finding increasing use in the fabrication of silicon discrete devices and integrated circuits. The mechanical and chemical properties of these glasses, and thus their use in the fabrication of any spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf838fa112d1adc086e88b822385f239
https://doi.org/10.1016/0022-0248(72)90258-8

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Refractory metal silicon device technology

Autor: Marvin Garfinkel, D.M. Brown, William Ernest Engeler, P.V. Gray

Publikováno v: Solid-State Electronics. 11:1105-1112

Films 2000–5000 A thick of Mo or W deposited over thin films of thermally grown SiO 2 are shown to be effective high temperature diffusion masks against both phosphorous and boron. These metal films may be precisely patterned and their diffusion ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8d55ddd3ee1af1c7723a2a79b8a4a04
https://doi.org/10.1016/0038-1101(68)90002-6

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