Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Maruthi N. Yogeesh"'
Autor:
Deji Akinwande, Maruthi N. Yogeesh, Wei Li, Helen Wong, Stephen M. Sirard, Sunshine X. Zhou, Tao Huang, Christopher J. Ellison, Reika Katsumata, Matthew C. Carlson, Richard D. Piner, Michael J. Maher, Zilong Wu, Alvin L. Lee
Publikováno v:
Polymer. 110:131-138
Patterning graphene into nanoribbons (graphene nanoribbons, GNR) allows for tunability in the emerging fields of plasmonic devices in the mid-infrared and terahertz regime. However, the fabrication processes of GNR arrays for plasmonic devices often
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7943a3e77f93ed64be604c34d5531051
https://doi.org/10.1016/j.polymer.2016.12.034
https://doi.org/10.1016/j.polymer.2016.12.034
Autor:
Di, Wu, Wei, Li, Amritesh, Rai, Xiaoyu, Wu, Hema C P, Movva, Maruthi N, Yogeesh, Zhaodong, Chu, Sanjay K, Banerjee, Deji, Akinwande, Keji, Lai
Publikováno v:
Nano letters. 19(3)
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c19585cdfc1c35ddce26aed224ef764b
https://pubmed.ncbi.nlm.nih.gov/30779591
https://pubmed.ncbi.nlm.nih.gov/30779591
Autor:
Maruthi N. Yogeesh, Xiaoyu Wu, Amritesh Rai, Wei Li, Di Wu, Hema C. P. Movva, Keji Lai, Deji Akinwande, Zhaodong Chu, Sanjay K. Banerjee
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3b83a9d8332609b59622093e2cb6650
Autor:
Yuan Huang, Peter Sutter, Deji Akinwande, Ke Chen, Seth R. Bank, Tiger Hu Tao, Shaoqing Zhang, Tianshu Lai, Shaoyin Fang, Nathanial Sheehan, Jung-Fu Lin, Feng He, Xianghai Meng, Yaguo Wang, Maruthi N. Yogeesh
Publikováno v:
Carbon. 107:233-239
Graphene has great potential for fabrication of ultrafast opto-electronics, in which relaxation and transport of photoexcited carriers determine device performance. Even though ultrafast carrier relaxation in graphene has been studied vigorously, tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45bd55fd12a50786dba6951ca4b8dfce
https://doi.org/10.1016/j.carbon.2016.05.075
https://doi.org/10.1016/j.carbon.2016.05.075
Autor:
Zilong Wu, Mikhail A. Belkin, Seth R. Bank, Alvin L. Lee, Andrew Briggs, Yuebing Zheng, Wei Li, K. M. McNicholas, Maruthi N. Yogeesh, Seungyong Jung, Deji Akinwande
Publikováno v:
Advanced Optical Materials. 4:2035-2043
Patterned arrays of graphene nanostructures, also referred as graphene metasurfaces, have proven to be capable of efficiently coupling with incident light by surface plasmon resonances. In this work, a new type of graphene metasurfaces with moire pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1355b9d279c52dd29dcbe09caf1046
https://doi.org/10.1002/adom.201600242
https://doi.org/10.1002/adom.201600242
Autor:
Saungeun Park, Deji Akinwande, Somayyeh Rahimi, Seung Heon Shin, Maruthi N. Yogeesh, Alvin L. Lee
Publikováno v:
IEEE Electron Device Letters. 37:512-515
We have achieved 140-nm channel length graphene thin-film transistors (TFTs) on flexible glass with a 95-GHz intrinsic cutoff frequency and greater than 30-GHz intrinsic power frequency after standard de-embedding. The flexible glass substrate offers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5efef7af1d9cf0cdf1651620cfecca
https://doi.org/10.1109/led.2016.2535484
https://doi.org/10.1109/led.2016.2535484
Autor:
Seth R. Bank, K. M. McNicholas, Deji Akinwande, Weinan Zhu, Maruthi N. Yogeesh, Saungeun Park
Publikováno v:
Nano Letters. 16:2301-2306
Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm(2)/V·s) at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bf62f107be494710cdbc0c9e2e7e3da
https://doi.org/10.1021/acs.nanolett.5b04768
https://doi.org/10.1021/acs.nanolett.5b04768
Autor:
Hsiao-Yu Chang, Shixuan Yang, Deji Akinwande, Maruthi N. Yogeesh, Sanjay K. Banerjee, Amritesh Rai, Atresh Sanne, Rudresh Ghosh, Nanshu Lu
Publikováno v:
Advanced Materials. 28:1818-1823
Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba6ef5becd49b48f648569468d33e495
https://doi.org/10.1002/adma.201504309
https://doi.org/10.1002/adma.201504309
Autor:
Weinan Zhu, Sushant Sonde, Sandra H. Aldave, Joon-Seok Kim, Deji Akinwande, Shixuan Yang, Li Tao, Nanshu Lu, Maruthi N. Yogeesh
Publikováno v:
Nano Letters. 15:1883-1890
High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6017b509d77ce6891a3141ff06b2947
https://doi.org/10.1021/nl5047329
https://doi.org/10.1021/nl5047329
Publikováno v:
IEEE Electron Device Letters. 37:449-451
In this letter, we discuss the design, fabrication, and high-frequency characterization of black phosphorous (BP)-based field-effect transistors (FETs) and their circuit applications. We demonstrate BP radio frequency (RF) FETs with an extrinsic tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e0e8b7621f0945640b98a7677a13bb
https://doi.org/10.1109/led.2016.2536102
https://doi.org/10.1109/led.2016.2536102