Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Martinus Petrus Creusen"'
Autor:
T.G. van de Roer, Irina Veretennicoff, E. Smalbrugge, W.C. van der Vleuten, Hugo Thienpont, Jan Danckaert, R.C. Strijbos, B. S. Ryvkin, Guy Verschaffelt, F Fouad Karouta, Martinus Petrus Creusen, G.A. Acket
Publikováno v:
IEEE Photonics Technology Letters, 12(8), 945-947. Institute of Electrical and Electronics Engineers
Vrije Universiteit Brussel
Vrije Universiteit Brussel
We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a43f40c3f5eb2bb52865df674271d42
https://doi.org/10.1109/68.867969
https://doi.org/10.1109/68.867969
Autor:
T.G. van de Roer, B.H. van Roy, F. de Bruyn, F Fouad Karouta, Martinus Petrus Creusen, W.C. van der Vleuten, E. Smalbrugge
Publikováno v:
Electrochemical and Solid-State Letters, 2(2), 83-85. Electrochemical Society, Inc.
A versatile sealing process for AlAs layers is presented. This sealing prevents the AlAs layers of AlAs/GaAs top distributed Bragg reflectors from further undesired oxidation during the wet oxidation of the AlAs current constriction layers in vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f699d2dd72cab410b13835d56730d70
https://doi.org/10.1149/1.1390742
https://doi.org/10.1149/1.1390742
Publikováno v:
1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).
As device density is continually scaled down, plasma charging damage has become crucial for the fabrication of integrated circuits. By decreasing the design rule below 0.5 /spl mu/m, electrical charging damage and physical damage such as profile dist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf325c6b1c72d6c96a66b7c528d0a84d
https://doi.org/10.1109/ppid.1998.725577
https://doi.org/10.1109/ppid.1998.725577
Publikováno v:
1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).
p-MOSFETs stressed by (simulated) plasma induced charging were thermally annealed for 20 minutes at 400/spl deg/C in different annealing ambients. After the anneal, the devices were stressed again to reveal latent plasma damage. The charge pumping te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1391b10ec00bf582cf2a7502381cf1d
https://doi.org/10.1109/ppid.1998.725613
https://doi.org/10.1109/ppid.1998.725613
Publikováno v:
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).
To monitor plasma charging damage, it is common to use extremely large antenna ratio (AR) testers to improve sensitivity. Calculating how the measured damage to these large AR testers impacts product is a serious issue that has not yet been resolved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32ec7211d885be3de66527308d7db47
https://doi.org/10.1109/vlsit.2000.852784
https://doi.org/10.1109/vlsit.2000.852784
Publikováno v:
Scopus-Elsevier
In this paper a comparison is made of several PID measurement techniques. A novel mechanism of plasma induced damage (PID) by high density plasma (HDP) inter metal dielectric (IMD) deposition is proposed. Results of a design of experiment (DOE) on Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2faa1b6689c606d3963702fe60e2457a
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034504960&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034504960&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
Electron shading (ES) effects, which lead to plasma process-induced damage in etching processes, were studied as a function of reactor- and transistor-type. It was found that the classical ES effect, which occurs under the latent antenna regime, domi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cc57c86d6044fda4a58eacf054d779d
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033312438&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033312438&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
Conventional antenna charging theory predicts that the net current drawn from a plasma glow discharge is proportional to the charge collecting area of the antenna. However, by correlating straightforward oxide breakdown statistics with typical yield
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac7570d5d97e7ee0d65327a4bfb3d921
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034505301&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034505301&partnerID=MN8TOARS