Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Martinus Hendrikus Antonius Leenders"'
Autor:
Marco Koert Stavenga, Kevin Cummings, Johannes Catharinus Hu Mulkens, Y. van Dommelen, Richard Joseph Bruls, Grouwstra Cedric Desire, J. van der Hoeven, Herman Boom, S. Wang, M. Suddendorf, Richard Moerman, Hans Jansen, Michel Riepen, Bob Streefkerk, M. Boerema, P. Huisman, Martinus Hendrikus Antonius Leenders
Publikováno v:
SPIE Proceedings.
This paper discusses the types and formation of immersion defects. It is shown that drying stains and water marks are the main immersion defects. The immersion defects are related to resist leaching, water penetration and droplet formation. It is sho
Autor:
B. van der Zwan, H. G. C. Werij, Martinus Hendrikus Antonius Leenders, Jozef Petrus Henricus Benschop, P. W. H. de Jager, B. Mertens, A. J. J. van Dijsseldonk
Publikováno v:
Microelectronic Engineering, 1, 53, 659-662
Contamination of optics and mask is one of the possible show stoppers for Extreme Ultraviolet Lithography. One of the important sources of hydrocarbon contamination is the outgassing of photoresist coated wafers. Due to the vacuum conditions, these h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9cd5878a16ef631ef37e47a7163f5d0
http://resolver.tudelft.nl/uuid:219935b1-ca2c-4fd2-bed7-e8424628a182
http://resolver.tudelft.nl/uuid:219935b1-ca2c-4fd2-bed7-e8424628a182
Autor:
Martinus Hendrikus Antonius Leenders, Jozef Petrus Henricus Benschop, Hans Meiling, Erik Roelof Loopstra, J. E. van der Werf
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2921
In order to design an exposure tool for extreme-ultraviolet (EUV) lithography that adheres to technology roadmap requirements, we translated overall system performance requirements to system design specifications by setting up detailed error budgets