Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Martino Lorenzini"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:4048-4062
This paper introduces an improved nonintrusive near-field technique for in situ characterization of distributed effects in GaN high-power transistors. Compared with previous passive probing approaches which sense electric fields induced by drain bond
Autor:
M. Baeumler, Helmer Konstanzer, M. Wespel, Peter Brückner, Stephan Maroldt, Michael Mikulla, Thomas Roedle, Ruediger Quay, Michael Dammann, P.J. van der Wel, Andreas Graff, Martino Lorenzini, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Microelectronics Reliability. 55:1667-1671
The temperature dependence of device degradation of AlGaN/GaN HEMTs on SiC substrate with a gate length of 0.25 μm has been investigated. The critical surface temperature, where device degradation sets in has been determined using drain-current step
Autor:
Klaus Köhler, T. Rodle, Oliver Ambacher, Patrick Waltereit, Martino Lorenzini, K. Riepe, Rüdiger Goldhahn, Stefan Müller, C. Buchheim, Rudiger Quay, Wolfgang Bronner, L. Harm, Michael Dammann, Michael Mikulla, K. Bellmann
Publikováno v:
physica status solidi c. 7:2398-2403
In this work we systematically study the structural, optical and electrical properties of AlGaN/GaN heterostructures grown by MOCVD 3-inch on SiC substrates The finally developed HEMTs demonstrate excellent high-voltage stability, high power performa
Autor:
Martino Lorenzini, Patrick Waltereit, Michael Mikulla, Thomas Roedle, Helmer Konstanzer, Stefan Müller, Roshna George, Michél Simon-Najasek, Oliver Ambacher, Frank Altmann, Paul J. van der Wel, Michael Dammann, Vladimir Polyakov, Rudiger Quay, Fouad Benkhelifa, M. Baeumler, Stephan Maroldt, M. Wespel, Joachim Wagner, Peter Brückner, Andreas Graff, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications.
Long-term stability and reliability of AlGaN/GaN high electron mobility transistors (HEMT) can be validated by various stress tests which allow studying the physical mechanisms responsible for degradation. As the electroluminescence (EL) intensity is
Publikováno v:
Theory of Transport Properties of Semiconductor Nanostructures ISBN: 9780412731006
Recently the hydrodynamic model has become popular in the field of analysis and simulation of semiconductor devices*. The model has the merit of providing, along with the concentration and current density of the carriers, also their average energy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c04546c5ba5f016583bee9fd37a0e2d8
https://hdl.handle.net/11380/742784
https://hdl.handle.net/11380/742784
Autor:
Chen, Ding-Yuan, Wen, Kai-Hsin, Thorsell, Mattias, Lorenzini, Martino, Hjelmgren, Hans, Chen, Jr-Tai, Rorsman, Niklas
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Aug2023, Vol. 220 Issue 16, p1-7, 7p
Autor:
Hou, Rui, Lorenzini, Martino, Spirito, Marco, Roedle, Thomas, van Rijs, Fred, de Vreede, Leo C. N.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; Nov2016 Part 2, Vol. 64 Issue 11b, p4048-4062, 15p
Publikováno v:
ACM Transactions on Storage; Jan2021, Vol. 17 Issue 1, p1-27, 27p
Conference
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Autor:
Dixit, Swati, Pattanaik, Manisha
Publikováno v:
2015 IEEE Power & Energy Society General Meeting; 2015, p893-896, 4p