Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Martina, Volpi"'
Autor:
Martina Volpi, Rémy Jouclas, Jie Liu, Guangfeng Liu, Luca Catalano, Nemo McIntosh, Marco Bardini, Christos Gatsios, Federico Modesti, Nicholas Turetta, David Beljonne, Jérôme Cornil, Alan R. Kennedy, Norbert Koch, Peter Erk, Paolo Samorì, Guillaume Schweicher, Yves H. Geerts
Publikováno v:
Advanced Science, Vol 10, Iss 26, Pp n/a-n/a (2023)
Abstract Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to
Externí odkaz:
https://doaj.org/article/9eba363aa9a54aeab785bb2549d1fb83
Autor:
Rémy Jouclas, Jie Liu, Martina Volpi, Lygia Silva de Moraes, Guillaume Garbay, Nemo McIntosh, Marco Bardini, Vincent Lemaur, Alexandre Vercouter, Christos Gatsios, Federico Modesti, Nicholas Turetta, David Beljonne, Jérôme Cornil, Alan R. Kennedy, Norbert Koch, Peter Erk, Paolo Samorì, Guillaume Schweicher, Yves H. Geerts
Publikováno v:
Advanced Science, Vol 9, Iss 19, Pp n/a-n/a (2022)
Abstract The charge transport of crystalline organic semiconductors is limited by dynamic disorder that tends to localize charges. It is the main hurdle to overcome in order to significantly increase charge carrier mobility. An innovative design that
Externí odkaz:
https://doaj.org/article/b8e44436e7d046549e7c1ae567668d51
Autor:
Lamiaa Fijahi, Jinghai Li, Adrián Tamayo, Martina Volpi, Guillaume Schweicher, Yves H. Geerts, Marta Mas-Torrent
Publikováno v:
Nanoscale. 15:230-236
The deposition of organic semiconductors (OSCs) using solution shearing deposition techniques is highly appealing for device implementation. However, when using high deposition speeds, it is necessary to use very concentrated OSC solutions. The OSCs
Autor:
Lamiaa, Fijahi, Jinghai, Li, Adrián, Tamayo, Martina, Volpi, Guillaume, Schweicher, Yves H, Geerts, Marta, Mas-Torrent
Publikováno v:
Nanoscale.
The deposition of organic semiconductors (OSCs) using solution shearing deposition techniques is highly appealing for device implementation. However, when using high deposition speeds, it is necessary to use very concentrated OSC solutions. The OSCs