Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Martin Zhang"'
Autor:
Andrew Quarmby, Martin Zhang, Moritz Geisler, Tomas Javorsky, Hendrik Mugele, Michael Cassel, Justin Lawley
Publikováno v:
Frontiers in Sports and Active Living, Vol 5 (2023)
IntroductionClimbing is an increasingly popular activity and imposes specific physiological demands on the human body, which results in unique injury presentations. Of particular concern are overuse injuries (non-traumatic injuries). These injuries t
Externí odkaz:
https://doaj.org/article/0f02661ddbd54250a6c42298db1adf5b
Autor:
Ian Q. Weigle, Weinong Han, Manish Aryal, Rudolph E. Tanzi, Dmitry Prokopenko, Sangram S. Sisodia, Xulun Zhang, Sherri Y Zhen, Can Martin Zhang, Yingxia Liang
Publikováno v:
The Journal of Experimental Medicine
The study demonstrates that the S198P mutation in APP promotes accelerated folding and egress to late compartments leading to enhanced Aβ production and deposition in vivo.
Familial Alzheimer’s disease (FAD)–linked mutations in the APP gene
Familial Alzheimer’s disease (FAD)–linked mutations in the APP gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5cf12a04d7ed8d79e35c064905afdeb
https://doi.org/10.1084/jem.20210313
https://doi.org/10.1084/jem.20210313
Akademický článek
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Autor:
Xiaoqiong Zhang, Jessica Xia, Priyam Patel, Eugene B. Chang, Monica Olszewski, Hemraj B. Dodiya, Ian Q. Weigle, Yingxia Liang, Julia Michalkiewicz, Sangram S. Sisodia, Jack A. Gilbert, Xulun Zhang, Carlos J Roman-Santiago, Holly L. Lutz, Abhinav Srinath, Can Martin Zhang, Matthew J. Schipma, Rudolph E. Tanzi
Publikováno v:
The Journal of experimental medicine. 219(1)
We previously demonstrated that lifelong antibiotic (ABX) perturbations of the gut microbiome in male APPPS1-21 mice lead to reductions in amyloid β (Aβ) plaque pathology and altered phenotypes of plaque-associated microglia. Here, we show that a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::709b5189ffe802a803cafeadd7ffafa2
https://pubmed.ncbi.nlm.nih.gov/34854884
https://pubmed.ncbi.nlm.nih.gov/34854884
Autor:
Larry Chen, William Li, David C. Zhou, Leilei Chen, Jingyu Shen, Jeff Zhang, Honyin Chiu, Kent Lin, Roy K.-Y. Wong, Martin Zhang, Thomas Zhao
Publikováno v:
IRPS
Reliability of commercial 100V E-mode GaN-on-Si power HEMTs are presented, fabricated on an industrial 200mm Si CMOS compatible Au-free technology platform. Electrical characteristics of GaN HEMTs are discussed first, delivering true E-mode operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62731f934e74ea99e5cfa43e069c285f
https://doi.org/10.1109/irps45951.2020.9129220
https://doi.org/10.1109/irps45951.2020.9129220
Autor:
Roy K.-Y. Wong, Thomas Zhao, Larry Chen, Yanbo Zou, Jeff Zhang, Martin Zhang, David C. Zhou, Han C. Chiu, Frank Zhang
Publikováno v:
2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
Commercial 40V-650V E-mode GaN-on-Si power HEMTs are presented, fabricated on an industrial 200mm Si CMOS compatible Au-free technology platform. Electrical characteristics of 100V and 650V GaN HEMTs are discussed first, featuring true E-mode operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ebc986cf0d07b4443b69a4c3795a6d
https://doi.org/10.1109/apec39645.2020.9124208
https://doi.org/10.1109/apec39645.2020.9124208
Autor:
Ailin Zhang, Yan Wu, Junwu Zhang, Andy Xie, Macro Wu, Honyin Chiu, Y.B. Zou, Simon He, Thomas Zhao, Roy K.-Y. Wong, Henry Liao, Jeff Zhang, Chunhua Zhou, Martin Zhang, Seiya Li, John Lee, Chen Po-Hui
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A novel strain engineering is reported to realize enhancement-mode high electron mobility transistors (HEMTs) with ultralow specific on-resistance ( $\boldsymbol{R}_{\mathbf{on},\mathbf{sp}}$ ) fabricated on 200 mm CMOS-compatible process platform. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ece6a0822bcdd3f61a1a4b19dd5c4c6a
https://doi.org/10.1109/ispsd.2019.8757694
https://doi.org/10.1109/ispsd.2019.8757694
Autor:
Ray Zhang, Andy Xie, Honyin Chiu, Diane Zhou, Justin Zhang, Simon He, Kenny Cao, Y.B. Zou, Tiger Hu, Fanny Chen, Sichao Li, Ronghui Hao, Junwu Zhang, Roy K.-Y. Wong, Martin Zhang, Allen Chou, Chen Longyun, John Lee, Thomas Zhao, Chuan-Yi Yang, Chen Po-Hui, Jeff Zhang, Marco Wu, Seiya Lee, Jiayun Shen, Huang Chen
Publikováno v:
Semiconductor Science and Technology. 36:064001
In this paper, we discuss possible solutions to overcome the critical issues for GaN-on-Si power device popularization including cost competitiveness to Si power MOSFETs, system level reliability verification, and electromagnetic interference (EMI) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c5170e6ef795a3259d63deca42cdf9
https://doi.org/10.1088/1361-6641/abe551
https://doi.org/10.1088/1361-6641/abe551
Autor:
Martin Zhang, Jung Hwan Yum, Feng Zhu, H. H Kim, Sung Il Park, Injo Ok, Han Zhao, Jack C. Lee
Publikováno v:
Applied Physics Letters. 91:132104
In this work, we studied the electrical characteristics of TaN∕HfO2∕GaAs metal-oxide-semiconductor capacitors with Si interface passivation layer (IPL) under various postdeposition anneal (PDA) conditions and various Si deposition temperatures/ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a543f389f5f9817e466d7ec052399c45
https://doi.org/10.1063/1.2790780
https://doi.org/10.1063/1.2790780