Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Martin Y. Sohn"'
Publikováno v:
APL Photonics, Vol 7, Iss 9, Pp 096105-096105-8 (2022)
Pushing the resolution limit to the nanoscale is a critical challenge for applying the reflective Fourier ptychographic microscopy (FPM) to metrologies for characterization of nanoscale features. Characterization of opaque nanoscale samples using ref
Externí odkaz:
https://doaj.org/article/ca8b37c718194201852b7a8cea91f298
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56724a179b52ef5860dd2ea851803662
https://doi.org/10.1117/12.2666132
https://doi.org/10.1117/12.2666132
Autor:
Eikhyun Cho, Taekyung Kim, Yoon Sung Bae, Sang-Soo Choi, Bryan M. Barnes, Richard M. Silver, Martin Y. Sohn
Publikováno v:
Optics and Lasers in Engineering. 152:106953
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d658e6d687f65f52514ec47218fd31
https://doi.org/10.1016/j.optlaseng.2022.106953
https://doi.org/10.1016/j.optlaseng.2022.106953
Publikováno v:
Journal of Power Sources. 364:130-137
Widespread commercialization of proton exchange membrane fuel cells remains curbed by various manufacturing and infrastructure challenges. One such technical barrier identified by the U. S. Department of Energy is the need for high-speed, in-line pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da03558c5a367dfb4e9ad3a8273cc081
https://doi.org/10.1016/j.jpowsour.2017.07.092
https://doi.org/10.1016/j.jpowsour.2017.07.092
Optical scatterfield imaging microscopy technique which has the capability of controlling scattered fields in the imaging mode is useful for quantitative nanoscale dimensional metrology that yields precise characterization of nanoscale features for s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad0020c51da7154052e2f3c201486de
https://europepmc.org/articles/PMC6998213/
https://europepmc.org/articles/PMC6998213/
Publikováno v:
Physical Review Applied. 11
In an industrial setting, only optical methods are fast enough to tease out the killer defects that may render a computer chip inoperable. Comprised of billions of periodic nanoelectronic devices, they yield optical responses like form birefringence,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e467c8d107f610fd770d8d64a35308
https://doi.org/10.1103/physrevapplied.11.064056
https://doi.org/10.1103/physrevapplied.11.064056
Autor:
Scott W. Schmucker, Bryan M. Barnes, Hui Zhou, Mark-Alexander Henn, Martin Y. Sohn, Richard M. Silver
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
The downscaling of features in the semiconductor industry has continuously placed pressure on optics-based measurement methods to yield new solutions for measuring ever-smaller devices. Such measurements are desirable as optics is unique in its combi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d4bc8f290e5d95144f541d4759532f7
https://doi.org/10.1117/12.2301076
https://doi.org/10.1117/12.2301076
Accurate optics-based dimensional measurements of features sized well-below the diffraction limit require a thorough understanding of the illumination within the optical column and of the three-dimensional scattered fields that contain the informatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1db37f593f15d2bdd32bb4d45818ff87
https://europepmc.org/articles/PMC5831148/
https://europepmc.org/articles/PMC5831148/
Autor:
Sang-Soo Choi, Dong Ryoung Lee, Bryan M. Barnes, Ronald G. Dixson, Martin Y. Sohn, Richard M. Silver
Publikováno v:
Photomask Technology.
A critical challenge in optical critical dimension metrology, that requires high measurement sensitivity as well as high throughput, is the dimensional measurements of features sized below the optical resolution limit. This paper investigates the rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f924e697884c1478e4ff6e54f4b2329
https://doi.org/10.1117/12.2280782
https://doi.org/10.1117/12.2280782
Publikováno v:
Proceedings of SPIE--the International Society for Optical Engineering. 9778
Dimensional scaling trends will eventually bring semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address the measurement and variability for these CDs using sufficiently small in-die m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::604a9216211a6ab3e8c9d0732a68afbb
https://pubmed.ncbi.nlm.nih.gov/28757674
https://pubmed.ncbi.nlm.nih.gov/28757674