Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Martin V. Holt"'
Autor:
Anakha V. Babu, Tao Zhou, Saugat Kandel, Tekin Bicer, Zhengchun Liu, William Judge, Daniel J. Ching, Yi Jiang, Sinisa Veseli, Steven Henke, Ryan Chard, Yudong Yao, Ekaterina Sirazitdinova, Geetika Gupta, Martin V. Holt, Ian T. Foster, Antonino Miceli, Mathew J. Cherukara
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract Coherent imaging techniques provide an unparalleled multi-scale view of materials across scientific and technological fields, from structural materials to quantum devices, from integrated circuits to biological cells. Driven by the construct
Externí odkaz:
https://doaj.org/article/0be7c60ee09a488f891cd431678364da
Autor:
Pinku Roy, Adra Carr, Tao Zhou, Binod Paudel, Xuejing Wang, Di Chen, Kyeong Tae Kang, Anastasios Pateras, Zachary Corey, Shizeng Lin, Jian‐Xin Zhu, Martin V. Holt, Jinkyoung Yoo, Vivien Zapf, Hao Zeng, Filip Ronning, Quanxi Jia, Aiping Chen
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract The discovery of topological Hall effect (THE) has important implications for next‐generation high‐density nonvolatile memories, energy‐efficient nanoelectronics, and spintronic devices. Both real‐space topological spin configuration
Externí odkaz:
https://doaj.org/article/f424e90227ba46f8b71f00e5ffd7f108
Rational design of mechanically robust Ni-rich cathode materials via concentration gradient strategy
Autor:
Tongchao Liu, Lei Yu, Jun Lu, Tao Zhou, Xiaojing Huang, Zhonghou Cai, Alvin Dai, Jihyeon Gim, Yang Ren, Xianghui Xiao, Martin V. Holt, Yong S. Chu, Ilke Arslan, Jianguo Wen, Khalil Amine
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
Mechanical integrity issues are one of the main causes of limited long-term cycle stability for Ni-rich cathode materials. Here the authors analyse the roles of cobalt and manganese and utilise a concentration gradient design to mitigate these issues
Externí odkaz:
https://doaj.org/article/c7c1c3287cc74766b3ec7f00038e0c40
Autor:
Hai-Tian Zhang, Tae Joon Park, Ivan A. Zaluzhnyy, Qi Wang, Shakti Nagnath Wadekar, Sukriti Manna, Robert Andrawis, Peter O. Sprau, Yifei Sun, Zhen Zhang, Chengzi Huang, Hua Zhou, Zhan Zhang, Badri Narayanan, Gopalakrishnan Srinivasan, Nelson Hua, Evgeny Nazaretski, Xiaojing Huang, Hanfei Yan, Mingyuan Ge, Yong S. Chu, Mathew J. Cherukara, Martin V. Holt, Muthu Krishnamurthy, Oleg G. Shpyrko, Subramanian K.R.S. Sankaranarayanan, Alex Frano, Kaushik Roy, Shriram Ramanathan
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Designing energy efficient and scalable artificial networks for neuromorphic computing remains a challenge. Here, the authors demonstrate tree-like conductance states at room temperature in strongly correlated perovskite nickelates by modulating prot
Externí odkaz:
https://doaj.org/article/b299380324b440b29b94f53de8da2725
Autor:
Viktor Ivády, Joel Davidsson, Nazar Delegan, Abram L. Falk, Paul V. Klimov, Samuel J. Whiteley, Stephan O. Hruszkewycz, Martin V. Holt, F. Joseph Heremans, Nguyen Tien Son, David D. Awschalom, Igor A. Abrikosov, Adam Gali
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Certain point defects in crystals can be used as optically addressable quantum bits, much like atoms trapped in vacuum. Ivády et al. show that embedding such artificial atoms in stacking faults can actually improve their optical properties, making t
Externí odkaz:
https://doaj.org/article/eb4c5ecc28844a8487d34d51ff312981
Autor:
Yogesh Sharma, Martin V. Holt, Nouamane Laanait, Xiang Gao, Ilia N. Ivanov, Liam Collins, Changhee Sohn, Zhaoliang Liao, Elizabeth Skoropata, Sergei V. Kalinin, Nina Balke, Gyula Eres, Thomas Z. Ward, Ho Nyung Lee
Publikováno v:
APL Materials, Vol 7, Iss 8, Pp 081127-081127-6 (2019)
Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (
Externí odkaz:
https://doaj.org/article/fdb271f291e241fa8993f180f7b9717e
Autor:
William J. Judge, Brian M. May, Khagesh Kumar, Mark F. Wolfman, David A. Shapiro, Zhonghou Cai, Martin V. Holt, Jordi Cabana
Publikováno v:
The Journal of Physical Chemistry C. 126:16082-16089
Autor:
Pinku Roy, Adra Carr, Tao Zhou, Binod Paudel, Xuejing Wang, Di Chen, Kyeong Tae Kang, Anastasios Pateras, Zachary Corey, Shizeng Lin, Jian‐Xin Zhu, Martin V. Holt, Jinkyoung Yoo, Vivien Zapf, Hao Zeng, Filip Ronning, Quanxi Jia, Aiping Chen
Publikováno v:
Advanced Electronic Materials.
Autor:
Andrew J. Torma, Wenbin Li, Hao Zhang, Qing Tu, Vladislav V. Klepov, Michael C. Brennan, Christopher L. McCleese, Matthew D. Krzyaniak, Michael R. Wasielewski, Claudine Katan, Jacky Even, Martin V. Holt, Tod A. Grusenmeyer, Jie Jiang, Ruth Pachter, Mercouri G. Kanatzidis, Jean-Christophe Blancon, Aditya D. Mohite
Publikováno v:
ACS Nano
ACS Nano, American Chemical Society, 2021, ⟨10.1021/acsnano.1c09142⟩
ACS Nano, 2021, 15 (12), pp.20550-20561. ⟨10.1021/acsnano.1c09142⟩
ACS Nano, American Chemical Society, 2021, ⟨10.1021/acsnano.1c09142⟩
ACS Nano, 2021, 15 (12), pp.20550-20561. ⟨10.1021/acsnano.1c09142⟩
International audience; Halide perovskites doped with magnetic impurities (such as the transition metals Mn2+, Co2+, Ni2+) are being explored for a wide range of applications beyond photovoltaics, such as spintronic devices, stable light-emitting dio
Autor:
Aileen Luo, Oleg Yu. Gorobtsov, Jocienne N. Nelson, Ding-Yuan Kuo, Tao Zhou, Ziming Shao, Ryan Bouck, Mathew J. Cherukara, Martin V. Holt, Kyle M. Shen, Darrell G. Schlom, Jin Suntivich, Andrej Singer
Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::069e0cd386755a426d8b97c6f4f34a00
http://arxiv.org/abs/2203.09980
http://arxiv.org/abs/2203.09980