Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Martin Steglich"'
Autor:
Martin Steglich, Christian Patzig, Lutz Berthold, Frank Schrempel, Kevin Füchsel, Thomas Höche, Ernst-Bernhard Kley, Andreas Tünnermann
Publikováno v:
AIP Advances, Vol 3, Iss 7, Pp 072108-072108 (2013)
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typic
Externí odkaz:
https://doaj.org/article/215bfc868e7b411ab5272532c15e96eb
Publikováno v:
Advances in X-Ray/EUV Optics and Components XV.
In addition to applications based on particle accelerator sources the XUV wavelength range is interesting for several further fields of research – for example in astronomy. On one hand, due to the short wavelengths a diffraction grating for these a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3127f481c3ef3f67c5b579aa6551a64a
https://doi.org/10.1117/12.2568754
https://doi.org/10.1117/12.2568754
Autor:
Yueqian Zhang, Martin Landmann, Stefan Heist, Gunther Notni, Peter Kühmstedt, Martin Steglich
Publikováno v:
Dimensional Optical Metrology and Inspection for Practical Applications VIII.
3D sensors based on pattern projection are a popular measuring instrument for the three-dimensional acquisition of people, e.g., for identification purposes or for human-machine interaction. State-of-the-art sensors typically project the pattern(s) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27be0394e726520d71e8b7bc618821d7
https://doi.org/10.1117/12.2518205
https://doi.org/10.1117/12.2518205
Publikováno v:
Integrated Optics: Design, Devices, Systems, and Applications V.
Backside illumination enables an increase in photoactive area and numerical aperture of Ge-on-Si photodetectors for SWIR applications. The transparency of silicon in the infrared range (λ > 1.1 μm) allows a nearly lossless propagation of incoming l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545fdcb74efa2aa55479472f85876143
https://doi.org/10.1117/12.2520432
https://doi.org/10.1117/12.2520432
Autor:
Martin Steglich, Astrid Bingel, Robert A. Müller, Norbert Kaiser, Andreas Tünnermann, Philipp Naujok, Ulrike Schulz
Publikováno v:
Thin Solid Films. 616:594-600
Highly transparent and conductive Al-doped ZnO/Ag/Al-doped ZnO (AZO/Ag/AZO) multilayers were prepared by industrial inline DC magnetron sputtering on glass substrates at room temperature. With optimized film thicknesses of 37 nm/10 nm/37 nm, an optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d846baf4ddf520c9029c32f0b13281cb
https://doi.org/10.1016/j.tsf.2016.09.032
https://doi.org/10.1016/j.tsf.2016.09.032
Publikováno v:
Infrared Physics & Technology. 69:218-221
Statistical Black Silicon antireflection structures for the mid-infrared spectral region, fabricated by Inductively Coupled Plasma Reactive Ion Etching, are investigated. Upon variation of etch duration scaling of the structure morphologies is observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c8631ceec27af00ffa058a1a71c2472
https://doi.org/10.1016/j.infrared.2015.01.033
https://doi.org/10.1016/j.infrared.2015.01.033
Autor:
Martin Steglich, Oliver Puffky
Publikováno v:
Silicon Nanomaterials Sourcebook ISBN: 9781315153551
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fec22d3330c6cc4751a21151571431e
https://doi.org/10.4324/9781315153551-18
https://doi.org/10.4324/9781315153551-18
Publikováno v:
physica status solidi (b). 252:105-111
THz emission from semiconductor surfaces is influenced by the sign and strength of the surface field as well as the relaxation dynamics of the photoinduced carriers. In this paper, an experimental study on argon implanted silicon surfaces is presente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b47e026eafce0744f248a4503cd46f4
https://doi.org/10.1002/pssb.201350402
https://doi.org/10.1002/pssb.201350402
Autor:
Kay Dietrich, Thomas Pertsch, Andreas Tünnermann, Ernst-Bernhard Kley, Carsten Rockstuhl, Martin Steglich, Uwe Hübner, Thomas Siefke, Matthias Zilk
Publikováno v:
Advanced Functional Materials. 30:1905722
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e0317f738675c06210299e5fd1a0b3c
https://doi.org/10.1002/adfm.201905722
https://doi.org/10.1002/adfm.201905722
Publikováno v:
SPIE Proceedings.
Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e79b099783c38c5109e17443562331dd
https://doi.org/10.1117/12.2236293
https://doi.org/10.1117/12.2236293