Loading effect correction set up by supplementing CD measurement analysis with machine learning

Autor: Clemens Utzny, Martin Sczyrba, Christian Bürgel

Publikováno v: Photomask Technology 2019.

With semiconductor technology approaching and exceeding 10 nm design rules the quality requirements for photomasks are continuously tightening. One of the crucial parameters is improved control of the critical dimension (CD) across the photomask. As

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::778401da7f9e06d52ccc2bef44786dea
https://doi.org/10.1117/12.2539821

Deal gently with the bird you are trying to catch: small scale CD control with machine learning

Autor: Christian Bürgel, Martin Sczyrba, Clemens Utzny

Publikováno v: Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.

The currently increasing demand for photo-masks in the regime of the 14nm technology drives many initiatives towards capacity and throughput increase of existing production lines. Such improvements are facilitated by improved control mechanisms of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3d2f36c41dbbe2aa101d10be195a508d
https://doi.org/10.1117/12.2534978

Absorber topography dependence of phase edge effects

Autor: Aamod Shanker, Martin Sczyrba, Andrew R. Neureuther, Brid Connolly, Laura Waller

Publikováno v: Shanker, A; Sczyrba, M; Connolly, B; Waller, L; & Neureuther, A. (2015). Absorber topography dependence of phase edge effects. Proceedings of SPIE-The International Society for Optical Engineering, 9635. doi: 10.1117/12.2197861. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/9789n99x

© 2015 SPIE. Mask topography contributes to phase at the wafer plane, even for OMOG binary masks currently in use at the 22nm node in deep UV (193nm) lithography. Here, numerical experiments with rigorous FDTD simulation are used to study the impact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f18422c2a87a4dbe7cbbf0be7f6bc26
https://escholarship.org/uc/item/9789n99x

Transport of intensity phase imaging in the presence of curl effects induced by strongly absorbing photomasks

Autor: Brid Connolly, Aamod Shanker, Laura Waller, Lei Tian, Martin Sczyrba, Andrew R. Neureuther

Publikováno v: Shanker, A; Tian, L; Sczyrba, M; Connolly, B; Neureuther, A; & Waller, L. (2014). Transport of intensity phase imaging in the presence of curl effects induced by strongly absorbing photomasks. Applied Optics, 53(34), J1-J6. doi: 10.1364/AO.53.0000J1. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/3d33s5b8
Applied optics, vol 53, iss 34

© 2014 Optical Society of America. We report theoretical and experimental results for imaging of electromagnetic phase edge effects in lithography photomasks. Our method starts from the transport of intensity equation (TIE), which solves for phase f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::170bad8d21a5d21d4470b38b2499e4cf
http://www.escholarship.org/uc/item/3d33s5b8

Analysis of edge effects in attenuating phase-shift masks using quantitative phase imaging

Autor: Aamod Shanker, Andrew R. Neureuther, Martin Sczyrba, Brid Connolly, Laura Waller

Publikováno v: SPIE Proceedings.

Thick mask electromagnetic edge effects in attenuating phase-shift masks (ATT-PSM) are analyzed by extracting optical phase at the wafer plane from a series of through focus aerial images with 193nm light. The thick edges of an ATT-PSM can lead to ph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd6914cc7ebfcdf3d5b0b781d13d513b
https://doi.org/10.1117/12.2027825