Zobrazeno 1 - 10 of 15 pro vyhledávání: '"Martin S. Barbosa"'
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Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
Autor: Martin S. Barbosa, Tian Lan, Clara Santato, Zhaojing Gao
Publikováno v: Web of Science
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2020-12-10T17:35:40Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-06-17 China Scholarship Council NSERC (DG) Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated tra
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2250c08924b0247ab277d70252411e83
https://doi.org/10.1007/s11664-020-08242-3
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3
Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
Autor: Marcelo Ornaghi Orlandi, Nina Balke, Martin S. Barbosa, Clara Santato, Wan-Yu Tsai
Publikováno v: Web of Science
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2020-12-10T19:59:50Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-05-07 Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Flu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::844b749179dc4a1ff107f48ca42fadda
https://doi.org/10.1021/acs.jpclett.0c00651
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5
Real-Time Monitoring of Electrochromic Memory Loss of Layered α-MoO3Nanoplates
Autor: Paulo Roberto Bueno, A. A. Felix, Marcelo Ornaghi Orlandi, Martin S. Barbosa
Publikováno v: Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2021-06-25T10:18:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-12-01 Combined in situ cyclic electrochemical and UV-vis spectroscopic methods were employed to monitor the memory loss of electrochromic propertie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f53f1c4d4979227b0213d61003ed4999
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6
Detection of H2 facilitated by ionic liquid gating of tungsten oxide films
Autor: Marcelo Ornaghi Orlandi, R. A. Silva, Clara Santato, Martin S. Barbosa
Publikováno v: Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2022-04-28T19:47:56Z (GMT). No. of bitstreams: 0 Previous issue date: 2022-01-01 Molecular hydrogen (H2) shows promise as a future renewable energy carrier. However, due to safety concerns, its reliable detection in differ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66009c0493c06ce7e504b0a1ec53c7e1
https://doi.org/10.1116/6.0001405
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7
Investigation of electronic and chemical sensitization effects promoted by Pt and Pd nanoparticles on single-crystalline SnO nanobelt-based gas sensors
Autor: Jae Jin Kim, Pedro H. Suman, Marcelo Ornaghi Orlandi, Martin S. Barbosa, Harry L. Tuller
Publikováno v: Web of Science
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2020-12-10T19:38:03Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-12-12 Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) MRSE
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50eede3b60f05176e70351c2ea7665ca
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8
Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media
Autor: Bill Baloukas, Arunprabaharan Subramanian, Gabriel Vinicius De Oliveira Silva, Francesca Soavi, Daniel Chartrand, Shiming Zhang, Juan C Gonzáles, Marcelo Ornaghi Orlandi, Xiang Meng, Clara Santato, Martin S. Barbosa, Fabio Cicoira
Publikováno v: Web of Science
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2019-10-04T12:38:12Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-07-24 NSERC DG MESI PSIIRI 936 China Scholarship Council Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Trottier Energy Institut
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ada9e6c1a2649517050482a6a5090db9
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9
Chemical and Electronic Sensitization Effects Promoted By Noble Metal Nanoparticles on Gas Sensors Based on SnO Nanobelts
Autor: Pedro H. Suman, Martin S. Barbosa, Marcelo Ornaghi Orlandi, Jae Jin Kim, Harry L. Tuller
Publikováno v: ECS Meeting Abstracts. :1471-1471
Introduction Semiconducting metal oxides (SMOx) are the most studied materials for gas sensing applications due to their outstanding capacity to detect flammable and toxic gases, and their low-cost processing and ease of handling. [1,2] Many strategi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4abd9bf02f7e6ff0c3b1138731663b17
https://doi.org/10.1149/ma2021-01561471mtgabs
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10
Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism
Autor: F. M. B. Oliveira, Marcelo Ornaghi Orlandi, Francesca Soavi, Xiang Meng, Martin S. Barbosa, Clara Santato
Electrolyte-gated transistors hold promise for applications in printable and flexible electronics. Metal oxide semiconductors are particularly interesting as electrolyte-gated channel materials for their abundance, thermodynamic stability and ease of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1d6ada32063c5274516164ed08bec44
http://hdl.handle.net/11585/629800
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