Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Martin Pfost"'
Autor:
Michael Schlüter, Martin Pfost
Publikováno v:
IET Power Electronics, Vol 16, Iss 1, Pp 102-117 (2023)
Abstract Power modules for several hundred amperes suffer from a high stray inductance compared to discrete setups at similar current density. The use of silicon carbide in such modules is beneficial but due to the high stray inductance, the switchin
Externí odkaz:
https://doaj.org/article/9e2e990832294f6498eca6e2d311f8d7
Autor:
Michael Schlüter, Martin Pfost
Publikováno v:
IET Power Electronics. 16:102-117
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e641a738d844d0479105e09352587cb
https://doi.org/10.1049/pel2.12367
https://doi.org/10.1049/pel2.12367
Autor:
Nils Jahn, Martin Pfost
Publikováno v:
2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152046ae81ac6ac66ea0aea39cfc4ebf
https://doi.org/10.1109/eurosime56861.2023.10100817
https://doi.org/10.1109/eurosime56861.2023.10100817
Autor:
Christian Unger, Martin Pfost
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:6432-6440
During short-circuit operation, silicon carbide MOSFETs exhibit several peculiarities compared to conventional silicon MOSFETs. These comprise the influence of the off -state gate–source voltage on the short-circuit (SC) current, the emergence of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ffbde00f83866e2590c37d1eac69180
https://doi.org/10.1109/jestpe.2021.3053127
https://doi.org/10.1109/jestpe.2021.3053127
Autor:
Nils Jahn, Martin Pfost
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd3a3cdd51ca3b9b0051445d68945d8f
https://doi.org/10.1109/eptc56328.2022.10013223
https://doi.org/10.1109/eptc56328.2022.10013223
Autor:
Thorsten Oeder, Martin Pfost
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::209823bdf3908c875ea095495bca4436
https://doi.org/10.1109/wipda56483.2022.9955266
https://doi.org/10.1109/wipda56483.2022.9955266
Autor:
Thorsten Oeder, Martin Pfost
Publikováno v:
IEEE Transactions on Electron Devices. 68:4322-4328
In this study, we investigate the threshold voltage ( ${V} _{{{ \text {th}}}}$ ) instability of p-gate GaN HEMTs induced by gate bias. Experimental results are acquired by a custom pulse setup for two commercially available devices with an ohmic gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882163b6db7dedee3f7ffea3a8420e63
https://doi.org/10.1109/ted.2021.3098254
https://doi.org/10.1109/ted.2021.3098254
Autor:
Nils Jahn, Martin Pfost
Publikováno v:
2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d5c0ef9aa553df12f0581afa1ccdd8
https://doi.org/10.1109/therminic57263.2022.9950678
https://doi.org/10.1109/therminic57263.2022.9950678
Publikováno v:
2022 International Conference on Electrical Machines (ICEM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::390db5676fcc5d72aa5ebfc197afedef
https://doi.org/10.1109/icem51905.2022.9910845
https://doi.org/10.1109/icem51905.2022.9910845
Autor:
Nils Jahn, Martin Pfost
Publikováno v:
2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9462238a9375cb91e04a753214b355d
https://doi.org/10.1109/itherm54085.2022.9899529
https://doi.org/10.1109/itherm54085.2022.9899529