Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Martin Ostermayr"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:520-528
This paper focuses on the practical usage of the Gumbel distribution for measured Vmin data of static random access memory (SRAM) arrays. It provides a framework which allows to estimate the failure density at end of life (EOL) in units of failing de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c148f1727403963e29decb5b749e9e
https://doi.org/10.1109/tdmr.2019.2924076
https://doi.org/10.1109/tdmr.2019.2924076
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 15:289-297
In this paper, a comprehensive methodology for the statistic of SRAM Vmin is presented. A plotting method for the linearization of the statistical distributions is proposed, and methodologies for size scaling and statistical extrapolations are develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff49f96a86f9ced3e5730610a38842ff
https://doi.org/10.1109/tdmr.2015.2429792
https://doi.org/10.1109/tdmr.2015.2429792
Autor:
Doris Schmitt-Landsiedel, Ettore Amirante, Martin Ostermayr, T. Fischer, Peter Huber, Karl Hofmann
Publikováno v:
Solid-State Electronics. 53:773-778
We present the results of a test structure that allows to measure the variation of SRAM p-MOS and n-MOS transistors in a dense environment and to apply Negative Bias Temperature Instability (NBTI) stress on the p-MOS transistors. The threshold voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f34f84bdbe19de59aa16aee207993d09
https://doi.org/10.1016/j.sse.2009.02.012
https://doi.org/10.1016/j.sse.2009.02.012
Autor:
Doris Schmitt-Landsiedel, Alexander Olbrich, Ettore Amirante, Peter Huber, T. Fischer, Thomas Nirschl, Martin Ostermayr
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:534-541
We present an area efficient test structure that allows measurement of the statistical distribution of SRAM cell read currents and write trip voltages for 1 million SRAM core cells. The data taken from measurements of wafers fabricated with a 90-nm a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5569f473f555f50737f53ef5a1459b
https://doi.org/10.1109/tsm.2008.2004329
https://doi.org/10.1109/tsm.2008.2004329
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 15:638-638
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c57d0baab7207fe393cb4cae7f1a6cd
https://doi.org/10.1109/tdmr.2015.2498241
https://doi.org/10.1109/tdmr.2015.2498241
Autor:
James H. Stathis, Andreas Kerber, R. Divakaruni, Yue Hu, Hemanth Jagannathan, Dae-Gyu Park, Siddarth A. Krishnan, Richard Carter, Deleep R. Nair, Yun-Yu Wang, Ricardo A. Donaton, William K. Henson, Shahab Siddiqui, Ernest Y. Wu, Murshed M. Chowdhury, Kathy Barla, Huiming Bu, Mukesh Khare, Rohit Pal, J.-P. Han, Matthew W. Stoker, S. Saroop, Sufi Zafar, Michael P. Chudzik, Eduard A. Cartier, X. Chen, Jin Cai, Vamsi Paruchuri, Eric C. Harley, Myung-Hee Na, Dimitris P. Ioannou, Ryosuke Iijima, Min Dai, Kevin McStay, Takashi Ando, Joseph F. Shepard, J. Schaeffer, J-H Lee, Naim Moumen, P. Montanini, Lisa F. Edge, Paul D. Agnello, Shreesh Narasimha, Srikanth Samavedam, Dechao Guo, Unoh Kwon, Dominic J. Schepis, Yue Liang, Martin Ostermayr, S. Inumiya, Thomas A. Wallner, B. Greene, H. Yamasaki, D.P. Prakash, Jaeger Daniel, Stephen W. Bedell, M. Hargrove, Michael A. Gribelyuk, Gauri Karve, Y. Lee, Vijay Narayanan, S. Uchimura, Martin M. Frank
Publikováno v:
2011 International Electron Devices Meeting.
Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH ) in p-channel MOSFETs has enabled a simplified gate-first high-к/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d662cd649e124b99bca46657dff7712f
https://doi.org/10.1109/iedm.2011.6131628
https://doi.org/10.1109/iedm.2011.6131628
Autor:
Ian Stobert, Martin Ostermayr, Colin J. Brodsky, Henning Haffner, Bradley Morgenfeld, Norman Chen, Alvin G. Thomas, Hideki Kanai, Juj An, Massud A. Aminpur
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13cb4c1f0e1b1faacc688288d66fdba6
https://doi.org/10.1109/asmc.2011.5898207
https://doi.org/10.1109/asmc.2011.5898207
Autor:
Haoren Zhuang, Martin Ostermayr, Meng Luo, Henning Haffner, Bradley Morgenfeld, Chan Sam Chang, Hideki Kanai, Jujin An
Publikováno v:
SPIE Proceedings.
The paper describes a process/design co-optimization effort based on an SRAM design to enable a single exposure contact process for the 28nm technology half node. As a start, a change to the wiring concept of the standard SRAM design was implemented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fdf5c9729f7cbd5a038ef9fc4643b96
https://doi.org/10.1117/12.879681
https://doi.org/10.1117/12.879681
Autor:
Melanie J. Sherony, J. Liang, M. Voelker, Myung-Hee Na, Jaeger Daniel, Kathy Barla, Y. Goto, G. Yang, Katsura Miyashita, Frank Scott Johnson, J.H. Park, R. Sampson, Jenny Lian, Kenneth J. Stein, JiYeon Ku, Christophe Bernicot, Knut Stahrenberg, S. Miyake, J. Sudijono, Haoren Zhuang, Li-Hong Pan, Ricardo A. Donaton, Martin Ostermayr, Gen Tsutsui, Manfred Eller, Richard A. Wachnik, S. Kohler, K. Kim, Wai-kin Li, Christian Wiedholz, M. Celik, Atsushi Azuma, An L. Steegen, T. Shimizu, Anda Mocuta, J.-P. Han, E. Kaste, H. van Meer, Masafumi Hamaguchi, Deleep R. Nair, N-S. Kim, Franck Arnaud, W. Neumueller, D. Chanemougame
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ced71a741b8bf85c300152efdb2927b
https://doi.org/10.7567/ssdm.2010.c-6-5l
https://doi.org/10.7567/ssdm.2010.c-6-5l
Autor:
K. Strahrenberg, M. Lipinski, R. Augur, K. Kang, S. ElGhouli, Nam-Sung Kim, Manfred Eller, Frank Scott Johnson, Kazuya Ohuchi, M. Sekine, Katsura Miyashita, Masafumi Hamaguchi, S. Uchimura, S. Miyaki, Qintao Zhang, J. Sudijono, Deleep R. Nair, Paulo Ferreira, JiYeon Ku, Martin Ostermayr, J-H. Park, S. Kohler, Franck Arnaud, Ron Sampson, Aaron Thean, Young Way Teh, Fumiyoshi Matsuoka, Richard Lindsay, Jenny Lian, J. Bonnouvrier, J.-P. Han, An L. Steegen
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
In this paper, we present a cost-effective 28nm CMOS technology for low power (LP) applications based on a high-k, single-metal-gate-first architecture. We report raw gate densities up to 4200 kGate/mm2, and, using the ARM Cortex-R4F as a reference,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf65bdb19ddca923a6de57aadabae95
https://doi.org/10.1109/iedm.2009.5424255
https://doi.org/10.1109/iedm.2009.5424255